公开(公告)号：US20210118727A1

公开(公告)日：2021-04-22

申请号：US17137945

申请日：2020-12-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koichi YATSUDA ,  Tatsuya YAMAGUCHI ,  Yannick FEURPRIER ,  Frederic LAZZARINO ,  Jean-Francois de MARNEFFE ,  Khashayar BABAEI GAVAN

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/3105

Abstract: A semiconductor device manufacturing method of forming a trench and a via in a porous low dielectric constant film formed on a substrate as an interlayer insulating film, includes: embedding a polymer having a urea bond in pores of the porous low dielectric constant film by supplying a raw material for polymerization to the porous low dielectric constant film; forming the via by etching the porous low dielectric constant film; subsequently, embedding a protective filling material made of an organic substance in the via; subsequently, forming the trench by etching the porous low dielectric constant film; subsequently, removing the protective filling material; and after the forming a trench, removing the polymer from the pores of the porous low dielectric constant film by heating the substrate to depolymerize the polymer, wherein the embedding a polymer having a urea bond in pores is performed before the forming a trench.

公开(公告)号：US20190181039A1

公开(公告)日：2019-06-13

申请号：US16213119

申请日：2018-12-07

Applicant: TOKYO ELECTRON LIMITED ,  IMEC VZW

Inventor： Koichi YATSUDA ,  Tatsuya YAMAGUCHI ,  Yannick FEURPRIER ,  Frederic LAZZARINO ,  Jean-Francois de MARNEFFE ,  Khashayar BABAEI GAVAN

IPC: H01L21/768 ,  H01L21/311

Abstract: A semiconductor device manufacturing method of forming a trench and a via in a porous low dielectric constant film formed on a substrate as an interlayer insulating film, includes: embedding a polymer having a urea bond in pores of the porous low dielectric constant film by supplying a raw material for polymerization to the porous low dielectric constant film; forming the via by etching the porous low dielectric constant film; subsequently, embedding a protective filling material made of an organic substance in the via; subsequently, forming the trench by etching the porous low dielectric constant film; subsequently, removing the protective filling material; and after the forming a trench, removing the polymer from the pores of the porous low dielectric constant film by heating the substrate to depolymerize the polymer, wherein the embedding a polymer having a urea bond in pores is performed before the forming a trench.