公开(公告)号：US20150078416A1

公开(公告)日：2015-03-19

申请号：US14490430

申请日：2014-09-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun PEI ,  Junwei BAO ,  Holger TUITJE ,  Ching-Ling MENG ,  Mihail D. MIHAYLOV

IPC: G01K11/24 ,  H01L21/66

CPC classification number: G01K11/24 ,  H01L21/67248

Abstract: Disclosed is a method and apparatus for measuring semiconductor substrate temperature using a differential acoustic time of flight measurement technique. The measurement is based on measuring the time of flight of acoustic (ultrasonic) waves across the substrate, and calculating a substrate temperature from the measured time of flight and the known temperature dependence of the speed of sound for the substrate material. The differential acoustic time of flight method eliminates most sources of interference and error, for example due to varying coupling between an ultrasonic transducer and the substrate. To further increase the accuracy of the differential acoustic time of flight measurement, a correlation waveform processing algorithm is utilized to obtain a differential acoustic time of flight measurement from two measured ultrasonic waveforms. To facilitate signal recognition and processing, a symmetric Lamb mode may be used as mode of excitation of the substrate.

Abstract translation: 公开了一种使用飞行测量技术的差分声学时间来测量半导体衬底温度的方法和装置。 该测量基于测量穿过基底的声波（超声波）的飞行时间，以及从测量的飞行时间和基底材料的声速的已知温度依赖性来计算基底温度。 差分声学时间飞行方法消除了大量的干扰和误差源，例如由于超声换能器和基底之间的耦合变化。 为了进一步提高差分声学时间飞行测量的精度，利用相关波形处理算法从两个测量的超声波波形获得飞行测量的差分声学时间。 为了便于信号识别和处理，可以使用对称的兰姆模式作为衬底的激发模式。

公开(公告)号：US20150330915A1

公开(公告)日：2015-11-19

申请号：US14714254

申请日：2015-05-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Wen JIN ,  Junwei BAO

IPC: G01N23/04 ,  G01N23/225

CPC classification number: H01L22/12 ,  G01N23/04 ,  G01N23/225

Abstract: Described is a method and system for measuring parameters of a structure on a substrate, such as a via or a through-silicon via (TSV) using an imaging X-ray metrology system. A previously-trained Support Vector Machine (SVM) model is used to extract structure parameters from the acquired structure X-ray images. Training of the Support Vector Machine (SVM) model is accomplished by using a library of actual or simulated X-ray images, or a combination of the two image types, paired with structure parameter sets.

Abstract translation: 描述了一种用于使用成像X射线测量系统测量诸如通孔或穿硅通孔（TSV）的衬底上的结构的参数的方法和系统。 使用先前训练的支持向量机（SVM）模型从所获取的结构X射线图像中提取结构参数。 支持向量机（SVM）模型的训练通过使用实际或模拟X射线图像库或两种图像类型的组合与结构参数集配对来实现。

公开(公告)号：US20150124250A1

公开(公告)日：2015-05-07

申请号：US14530164

申请日：2014-10-31

Applicant: TOKYO ELECTRON LIMITED

Inventor： Junwei BAO ,  Ching-Ling MENG ,  Holger TUITJE ,  Mihail MIHAYLOV ,  Yan CHEN ,  Zheng YAN ,  Haixing ZOU ,  Hanyou CHU

IPC: G01J3/443 ,  G01N21/31

CPC classification number: G01J3/443 ,  G01N21/31 ,  G01N21/68 ,  G01N2201/10

Abstract: Disclosed is a method, computer method, system, and apparatus for measuring two-dimensional distributions of optical emissions from a plasma in a semiconductor plasma processing chamber. The acquired two-dimensional distributions of plasma optical emissions can be used to infer the two-dimensional distributions of concentrations of certain chemical species of interest that are present in the plasma, and thus provide a useful tool for process development and also for new and improved processing tool development. The disclosed technique is computationally simple and inexpensive, and involves the use of an expansion of the assumed optical intensity distribution into a sum of basis functions that allow for circumferential variation of optical intensity. An example of suitable basis functions are Zernike polynomials.

Abstract translation: 公开了一种用于测量半导体等离子体处理室中的等离子体的光发射的二维分布的方法，计算机方法，系统和装置。 所获得的等离子体光学发射的二维分布可以用于推断存在于等离子体中的某些化学物质的浓度的二维分布，并且因此为工艺开发提供了有用的工具，并为新的和改进的 加工工具开发。 所公开的技术在计算上是简单和便宜的，并且涉及将假设的光强度分布的扩展用于允许光强度的周向变化的基函数的总和。 合适的基函数的例子是泽尔尼克多项式。