公开(公告)号：US20210143044A1

公开(公告)日：2021-05-13

申请号：US17088123

申请日：2020-11-03

Applicant: Tokyo Electron Limited

Inventor： Shinsuke OKA ,  Kenya IWASAKI ,  Hideto SAITO

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/687

Abstract: A plasma processing apparatus includes: a vacuumable processing container; a lower electrode provided inside the processing container and for placing a substrate thereon; an edge ring arranged to surround a periphery of the substrate; an electrostatic chuck provided on the lower electrode to attract the substrate and the edge ring; a heat-transfer-gas supply part for supplying a heat transfer gas between the electrostatic chuck and the edge ring through one or more first through-holes respectively formed in the lower electrode and the electrostatic chuck; and a heat-transfer-gas exhaust part for exhausting the heat transfer gas between the electrostatic chuck and the edge ring through one or more second through-holes respectively formed in the lower electrode and the electrostatic chuck. Electrostatic chuck openings of the second through-holes are formed radially inward of those of the first through-holes between the electrostatic chuck and the edge ring.

公开(公告)号：US20190120703A1

公开(公告)日：2019-04-25

申请号：US16095114

申请日：2017-04-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadashi MITSUNARI ,  Satoshi TANAKA ,  Tsuyoshi MORIYA ,  Toshiya MATSUDA ,  Masaaki MIYAGAWA ,  Kenya IWASAKI

IPC: G01K11/32

Abstract: A temperature measurement substrate according to an embodiment of the present disclosure includes: a substrate which is any one of a semiconductor wafer and a substrate for a flat panel display; and at least one optical fiber laid on a surface of the substrate and having a first pattern portion and a second pattern portion formed more densely than the first pattern portion.