公开(公告)号：US20150001181A1

公开(公告)日：2015-01-01

申请号：US14487135

申请日：2014-09-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tatsuya OGI ,  Wataru OZAWA ,  Kimihiro FUKASAWA ,  Kazuhiro KANAYA

IPC: H01J37/32

CPC classification number: H01J37/32926 ,  H01J37/32532 ,  H01J37/32779 ,  H01J37/32899 ,  H01J37/3299

Abstract: Provided is a parallel flat-panel type plasma processing apparatus which includes a recipe storing unit storing a processing recipe for performing a plasma processing, a compensation setting unit setting an accumulation time of the plasma processing or the number of processed substrates after starting using a new second electrode and the compensation value of the set temperature of the second electrode in an input screen, and a storage unit storing the compensated set value. The plasma processing apparatus is further equipped with a program for controlling a temperature adjusting mechanism based on a set temperature after compensation by adding a set temperature of an upper electrode written in the processing recipe to the compensation value stored within the storage unit. As a result, the non-uniformity in the plasma processing between the substrates caused by the change of processing atmosphere is suppressed.

Abstract translation: 提供一种平行平板型等离子体处理装置，其包括存储用于执行等离子体处理的处理配方的配方存储单元，设置等离子体处理的累积时间的补偿设定单元或启动后的处理的基板的数量，使用新的 第二电极和输入屏幕中第二电极的设定温度的补偿值，以及存储补偿的设定值的存储单元。 等离子体处理装置还配备有用于通过将在处理配方中写入的上部电极的设定温度与存储在存储单元中的补偿值相加而基于补偿后的设定温度来控制温度调节机构的程序。 结果，抑制了由处理气氛的变化引起的基板之间的等离子体处理的不均匀性。

公开(公告)号：US20180068906A1

公开(公告)日：2018-03-08

申请号：US15693711

申请日：2017-09-01

Applicant: Tokyo Electron Limited

Inventor： Tatsuya OGI ,  Hiroaki MOCHIZUKI

IPC: H01L21/66 ,  H01L21/67 ,  G01L13/00

CPC classification number: H01L22/10 ,  G01L13/00 ,  G05B19/0428 ,  G05B19/058 ,  G05B23/0235 ,  H01L21/67063

Abstract: A method performed by a semiconductor manufacturing apparatus includes calculating, by a processor of the semiconductor manufacturing apparatus, 3 standard deviations of process condition measurements obtained at a predetermined interval from log information of processing of substrates that have been correctly processed, calculating at least one of an upper limit and a lower limit for anomaly detection based on the calculated 3 standard deviations, and detecting an anomaly in the processing of the substrates based on the at least one of the upper limit and the lower limit.