公开(公告)号：US20190304824A1

公开(公告)日：2019-10-03

申请号：US16369707

申请日：2019-03-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takayuki SUZUKI ,  Wataru TAKAYAMA ,  Takahiro MURAKAMI ,  Kimihiro FUKASAWA ,  Shinichiro HAYASAKA

IPC: H01L21/677 ,  H01L21/67 ,  H01L21/311 ,  H01L21/687 ,  H01J37/20 ,  H01J37/32

Abstract: A plasma processing apparatus includes a placing table having a placing surface on which a workpiece is placed to be subjected to a plasma processing; an elevator configured to raise and lower the workpiece with respect to the placing surface of the placing table; and an elevator controller configured to control the elevator, during a period until a transfer of the workpiece begins after a completion of the plasma processing on the workpiece, to hold the workpiece at a position where the placing surface of the placing table and the workpiece are spaced apart from each other by a distance that prevents an intrusion of a reaction product, and control the elevator, when the transfer of the workpiece begins, to raise the workpiece from the position where the workpiece is held.

公开(公告)号：US20150001181A1

公开(公告)日：2015-01-01

申请号：US14487135

申请日：2014-09-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tatsuya OGI ,  Wataru OZAWA ,  Kimihiro FUKASAWA ,  Kazuhiro KANAYA

IPC: H01J37/32

CPC classification number: H01J37/32926 ,  H01J37/32532 ,  H01J37/32779 ,  H01J37/32899 ,  H01J37/3299

Abstract: Provided is a parallel flat-panel type plasma processing apparatus which includes a recipe storing unit storing a processing recipe for performing a plasma processing, a compensation setting unit setting an accumulation time of the plasma processing or the number of processed substrates after starting using a new second electrode and the compensation value of the set temperature of the second electrode in an input screen, and a storage unit storing the compensated set value. The plasma processing apparatus is further equipped with a program for controlling a temperature adjusting mechanism based on a set temperature after compensation by adding a set temperature of an upper electrode written in the processing recipe to the compensation value stored within the storage unit. As a result, the non-uniformity in the plasma processing between the substrates caused by the change of processing atmosphere is suppressed.

Abstract translation: 提供一种平行平板型等离子体处理装置，其包括存储用于执行等离子体处理的处理配方的配方存储单元，设置等离子体处理的累积时间的补偿设定单元或启动后的处理的基板的数量，使用新的 第二电极和输入屏幕中第二电极的设定温度的补偿值，以及存储补偿的设定值的存储单元。 等离子体处理装置还配备有用于通过将在处理配方中写入的上部电极的设定温度与存储在存储单元中的补偿值相加而基于补偿后的设定温度来控制温度调节机构的程序。 结果，抑制了由处理气氛的变化引起的基板之间的等离子体处理的不均匀性。