公开(公告)号：US20180350566A1

公开(公告)日：2018-12-06

申请号：US15997776

申请日：2018-06-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuhiro TOBE ,  Jun HIROSE

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a mounting table, a power supply unit and a power supply control unit. The mounting table has therein a coil provided along a mounting surface on which a focus ring is mounted. The power supply unit is configured to apply a high frequency voltage to the coil. The power supply control unit is configured to control the power supply unit to increase a power of the high frequency voltage applied to the coil in accordance with consumption of the focus ring.

公开(公告)号：US20180308738A1

公开(公告)日：2018-10-25

申请号：US15959423

申请日：2018-04-23

Applicant: Tokyo Electron Limited

Inventor： Yasuhiro TOBE

IPC: H01L21/683 ,  H01L21/687 ,  H01J37/32

CPC classification number: H01L21/6833 ,  H01J37/32449 ,  H01J37/32715 ,  H01L21/68742

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes: an electro-static chuck configured to retain a substrate on a platform by electrostatic attraction; an ionized gas generation unit configured to ionize a pressure-controlled gas to generate an ionized gas; a gas supplying path, which is made of insulating material or to whose inner surface insulating processing is applied, configured to allow passage of the generated ionized gas; a gas supplying tube configured to supply the ionized gas that has passed the gas supplying path to a gap between the substrate and the electro-static chuck; and a gas exhaust path, which is provided inside the platform, configured to exhaust the gas that has been supplied to the gap.