公开(公告)号：US20160351398A1

公开(公告)日：2016-12-01

申请号：US15165085

申请日：2016-05-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Hidenori MIYOSHI ,  Masahiro OKA ,  Genji NAKAMURA ,  Yuki KOBAYASHI ,  Yasuhiro SUGIMOTO

IPC: H01L21/223 ,  H01L21/324 ,  H01J37/32 ,  H01L21/265

CPC classification number: H01L21/2236 ,  H01J37/32192 ,  H01J37/32293 ,  H01J37/32724 ,  H01L21/324 ,  H01L29/16

Abstract: Disclosed is a method of manufacturing a semiconductor element by implanting a dopant to a substrate to be processed. High frequency plasma is generated within a processing container by using microwaves. By using the generated high frequency plasma, a plasma doping treatment is performed on a germanium-containing to-be-processed substrate which is held on a holding table within the processing container.

Abstract translation: 公开了一种通过将掺杂剂注入到待处理的基板上来制造半导体元件的方法。 通过使用微波在处理容器内产生高频等离子体。 通过使用所生成的高频等离子体，对保持在处理容器内的保持台上的含锗被处理基板进行等离子体掺杂处理。