公开(公告)号：US11901166B2

公开(公告)日：2024-02-13

申请号：US17490574

申请日：2021-09-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tetsuya Miyashita ,  Kanto Nakamura ,  Yusuke Kikuchi

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/34

CPC classification number: H01J37/3405 ,  C23C14/3407 ,  H01J37/3244 ,  H01J37/3455

Abstract: A magnetron sputtering apparatus is provided. The apparatus comprises: a vacuum chamber storing a substrate; a plurality of sputtering mechanisms, each including a target having one surface facing the inside of the vacuum chamber, a magnet array, and a moving mechanism for reciprocating the magnet array between a first position and a second position on the other surface of the target; a power supply for forming plasma by supplying power to targets of selected sputtering mechanisms for film formation; a gas supplier for supplying a gas for plasma formation into the vacuum chamber; and a controller for outputting a control signal, in performing the film formation, such that magnet arrays of selected and unselected sputtering mechanisms, extension lines of moving paths of the magnet arrays thereof intersecting each other in plan view, move synchronously or are located at certain positions so as to be distinct from each other.