专利检索 ap:("TONGWEI SOLAR (CHENGDU) CO., LTD." OR "TONGWEI SOLAR (MEISHAN) CO., LTD." OR "TONGWEI SOLAR (JINTANG) CO., LTD." OR "TONGWEI SOLAR (HEFEI) CO., LTD." OR "TONGWEI SOLAR (ANHUI) CO., LTD.") AND inv:"Taihong XIE" 第 1 页

1.

发明公开
SOLAR CELL AND FRONT ELECTRODE THEREOF, AND MANUFACTURING METHOD 审中-公开

公开(公告)号：US20230343878A1

公开(公告)日：2023-10-26

申请号：US17908483

申请日：2021-12-22

申请人： TONGWEI SOLAR (CHENGDU) CO., LTD. , TONGWEI SOLAR (MEISHAN) CO., LTD. , TONGWEI SOLAR (JINTANG) CO., LTD. , TONGWEI SOLAR (HEFEI) CO., LTD. , TONGWEI SOLAR (ANHUI) CO., LTD.

发明人： Zhi HUANG , Lin ZHANG , Wei XIA , Guanqun XU , Tao XU , Liubin WAN , Biao PENG , Feng GU , Xujin ZHAI , Taihong XIE

IPC分类号： H01L31/02 , H01L31/0216 , H01L31/0224

CPC分类号： H01L31/0201 , H01L31/02168 , H01L31/022425

摘要： Disclosed are a high-efficiency and high-reliability PERC solar cell and a front electrode thereof, and a manufacturing method, which belong to the solar cell technology. Busbars of the front electrode of solar cell of the present disclosure includes fine busbars and solder joints distributed on the fine busbars at intervals. Each fine busbar between adjacent solder joints includes a straight fine busbar connecting the two solder joints, and side fine busbars located on both sides of the straight fine busbar respectively. In the method for manufacturing the front electrode, the busbars and the fingers are printed by a step-by-step printing process.

2.

发明公开
Solar Cell, ALOx Depositing Method Therefor, and Cell Back Passivation Structure and Method 审中-公开

公开(公告)号：US20230378380A1

公开(公告)日：2023-11-23

申请号：US18251014

申请日：2022-03-30

申请人： TONGWEI SOLAR (ANHUI) CO., LTD. , TONGWEI SOLAR (JINTANG) CO., LTD.

发明人： Zhi HUANG , Lin ZHANG , Peng ZHANG , Dong YANG , Tao XU , Xujin ZHAI , Taihong XIE , Shengyi XIAO

IPC分类号： H01L31/0216 , H01L31/18

CPC分类号： H01L31/02167 , H01L31/1804

摘要： The present disclosure relates to the technical field of solar cell preparation, and provides a solar cell, an AlOx depositing method therefor, and a cell back passivation structure and method. In the present disclosure, a silicon wafer which has been subjected to thermal oxidization and annealing is placed into a tubular PECVD equipment. The chamber is vacuumized to a pressure of 100-2000 mTorr and heated to a temperature of 300-400° C. Then nitrous oxide and TMA as reaction gases are introduced in to the chamber. The radio-frequency power supply is turned on and an AlOx passivation film having two-layer, three-layer, or more-layer film structure is prepared.