公开(公告)号：US20230146193A1

公开(公告)日：2023-05-11

申请号：US18093477

申请日：2023-01-05

Applicant: TOPPAN Inc.

Inventor： Noriaki IKEDA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L27/1251 ,  H01L29/66742 ,  H01L27/127 ,  H01L29/41733

Abstract: A thin-film transistor includes an insulating substrate, a gate electrode, a first gate insulating layer, a second gate insulating layer, a semiconductor layer, an insulating protective layer, a source electrode, and a drain electrode. In the transistor, the first gate insulating layer includes an insulating material containing an organic material, the second gate insulating layer includes an inorganic insulating material, the second gate insulating layer has a thickness that is smaller than a thickness of the first gate insulating layer, and the second gate insulating layer is formed only in an area overlapping the semiconductor layer or the protective layer.