公开(公告)号：US20230387242A1

公开(公告)日：2023-11-30

申请号：US18366938

申请日：2023-08-08

Applicant: TOPPAN Inc.

Inventor： Chihiro IMAMURA ,  Manabu ITO ,  Yukikazu TANAKA

IPC: H01L29/49 ,  H01L29/786 ,  H01L29/66 ,  H01L29/423 ,  H01L29/40

CPC classification number: H01L29/4908 ,  H01L29/7869 ,  H01L29/66969 ,  H01L29/42384 ,  H01L29/401 ,  H01L29/78603

Abstract: A gate insulating layer includes a first gate insulating film including an organic polymer compound and covering a second part of a support surface and a gate electrode layer, and second gate insulating film including an inorganic silicon compound and sandwiched between the first gate insulating film and a semiconductor layer. The second gate insulating film has a thickness of 2 nm or greater and 30 nm or less, and the second gate insulating film has a hydrogen content of 5 at % or more and 13 at % or less so as to enhance the electrical durability of the thin film transistor against bending of the flexible substrate.