公开(公告)号：US10734445B2

公开(公告)日：2020-08-04

申请号：US15910786

申请日：2018-03-02

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Minoru Oda ,  Akira Yotsumoto ,  Kotaro Noda

IPC: H01L29/786 ,  H01L27/24 ,  H01L23/528 ,  H01L29/66 ,  H01L29/45 ,  H01L21/768 ,  H01L21/311 ,  H01L29/06

Abstract: A storage device including a transistor portion including a transistor, a plurality of interlayer insulating films provided above the transistor portion, a plurality of first conductive layers provided respectively between the plurality of interlayer insulating films, and a second conductive layer extending through the plurality of interlayer insulating films and the plurality of first conductive layers, the second conductive layer having one end electrically connected to the transistor portion, and a part that extends beyond a portion of the transistor portion.