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公开(公告)号：US10700272B2
公开(公告)日：2020-06-30
申请号：US16117718
申请日：2018-08-30
Applicant: TOSHIBA MEMORY CORPORATION
Inventor： Kazuhiro Katono , Takeshi Ishizaki , Atsuko Sakata
IPC: H01L45/00
Abstract: According to one embodiment, the semiconductor memory device includes a first electrode, a first material layer, including a first material, located on the first electrode, a second material, surrounded by the first material of the first material layer, including a phase change material, and a second electrode provided on the first material.
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