公开(公告)号：US20200273876A1

公开(公告)日：2020-08-27

申请号：US16530741

申请日：2019-08-02

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Takayuki KASHIMA ,  Kohei NYUI ,  Kotaro FUJII ,  Hiroyuki YAMASAKI

IPC: H01L27/11582 ,  G11C5/06 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157

Abstract: According to one embodiment, a semiconductor storage device includes a stacked body, a first semiconductor layer extending in the stacked body, a first charge storage layer disposed between the plurality of first conductor layers and the first semiconductor layer, a second conductor layer disposed above the stacked body, a second semiconductor layer extending through the second conductor layer, a third conductor layer disposed between the second semiconductor layer and the second conductor layer, a first insulator layer disposed above the third conductor layer, and a second insulator layer including a first portion disposed between the second semiconductor layer and the third conductor layer and a second portion disposed between the second semiconductor layer and the first insulator layer. A diameter of the second insulator layer is larger in the second portion than in the first portion.

公开(公告)号：US20200185403A1

公开(公告)日：2020-06-11

申请号：US16522754

申请日：2019-07-26

Applicant: Toshiba Memory Corporation

Inventor： Kohei NYUI ,  Takayuki KASHIMA

IPC: H01L27/11578 ,  H01L27/1157 ,  H01L29/78 ,  H01L29/792 ,  H01L29/66

Abstract: A semiconductor memory device according to an embodiment includes first and second conductive layers and first and second pillar. The first pillar penetrates the first conductive layers, and includes one part of a first semiconductor layer. The second pillar penetrates the second conductive layer and is provided on the first pillar. The second pillar includes another part of the first semiconductor layer. An area of the second pillar is smaller than an area of the first pillar. The first semiconductor layer includes a first portion facing an uppermost one of the first conductive layers and a second portion facing the second conductive layer. The first semiconductor layer is continuous at least from the first portion to the second portion.

公开(公告)号：US20200286910A1

公开(公告)日：2020-09-10

申请号：US16530564

申请日：2019-08-02

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Takayuki KASHIMA

IPC: H01L27/11582 ,  G11C5/06 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157

Abstract: According to one embodiment, a semiconductor memory device includes a plurality of first conductor layers stacked in a first direction, a second conductor layer provided above the first conductor layer, a first semiconductor layer extending in the first direction in the plurality of first conductor layers, a second semiconductor layer including a first portion extending in the first direction in the second conductor layer and a second portion of which a diameter in a cross section orthogonal to the first direction is larger than a diameter of the first portion, and being in contact with the first semiconductor layer in the second portion, and a first charge storage layer disposed between the plurality of first conductor layers and the first semiconductor layer. An upper end of the first charge storage layer protrudes upward in the first direction in comparison with an upper end of the first semiconductor layer.