Electrostatic chuck and semiconductor manufacturing apparatus

    公开(公告)号:US11830755B2

    公开(公告)日:2023-11-28

    申请号:US17693623

    申请日:2022-03-14

    Applicant: TOTO LTD.

    CPC classification number: H01L21/6833 H01J37/32724

    Abstract: An electrostatic chuck includes a ceramic dielectric substrate and a base plate. The ceramic dielectric substrate includes a first major surface, a second major surface, a groove part, and a plurality of cooling gas holes. The groove part includes first and second circumferential grooves, and first and second radial-direction grooves. The plurality of cooling gas holes includes first and second holes. The first hole overlaps the first radial-direction groove. The second hole overlaps the second radial-direction groove. The base plate includes a gas inlet path that supplies the cooling gas to the first and second holes. The first circumferential groove includes first and second end portions. The second circumferential groove includes third and fourth end portions. The third end portion and the fourth end portion do not overlap the first end portion in the radial direction.

Patent Agency Ranking