Electrostatic chuck and semiconductor manufacturing apparatus

    公开(公告)号:US11830755B2

    公开(公告)日:2023-11-28

    申请号:US17693623

    申请日:2022-03-14

    Applicant: TOTO LTD.

    CPC classification number: H01L21/6833 H01J37/32724

    Abstract: An electrostatic chuck includes a ceramic dielectric substrate and a base plate. The ceramic dielectric substrate includes a first major surface, a second major surface, a groove part, and a plurality of cooling gas holes. The groove part includes first and second circumferential grooves, and first and second radial-direction grooves. The plurality of cooling gas holes includes first and second holes. The first hole overlaps the first radial-direction groove. The second hole overlaps the second radial-direction groove. The base plate includes a gas inlet path that supplies the cooling gas to the first and second holes. The first circumferential groove includes first and second end portions. The second circumferential groove includes third and fourth end portions. The third end portion and the fourth end portion do not overlap the first end portion in the radial direction.

    Electrostatic chuck and semiconductor manufacturing apparatus

    公开(公告)号:US11776836B2

    公开(公告)日:2023-10-03

    申请号:US17469260

    申请日:2021-09-08

    Applicant: TOTO LTD.

    Abstract: An electrostatic chuck includes a ceramic dielectric substrate; a base plate; and a heater unit which heats the ceramic dielectric substrate. The heater unit includes a first heater element. The first heater element has a plurality of sub-zones. The sub-zones include a first sub-zone. The first sub-zone includes a sub-heater line generating heat by allowing a current to flow, a first sub-power feeding portion feeding a power to the sub-heater line, and a second sub-power feeding portion feeding a power to the sub-heater line. The first sub-zone has a central region located centrally in the first sub-zone and an outer peripheral region located outside the central region when viewed along a Z-direction perpendicular to the first major surface. At least one of the first sub-power feeding portion and the second sub-power feeding portion is provided in the central region.

    Electrostatic chuck and semiconductor manufacturing apparatus

    公开(公告)号:US11756820B2

    公开(公告)日:2023-09-12

    申请号:US17469159

    申请日:2021-09-08

    Applicant: TOTO LTD.

    Abstract: An electrostatic chuck includes a ceramic dielectric substrate; a base plate; and a heater unit which heats the ceramic dielectric substrate. The heater unit includes first and second heater elements. The second heater element has a plurality of main zones separated from each other in a radial direction. The first heater element has a plurality of sub-zones separated from each other. A number of the sub-zones is larger than a number of the main zones. The main zones include a first main zone. The first main zone has a main heater line and a first main power feeding portion. The sub-zones include a first sub-zone overlapping the first main zone. The first sub-zone has a central region and an outer peripheral region. The first main power feeding portion is provided at a position where the first main power feeding portion overlaps the central region.

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