公开(公告)号：US10522386B2

公开(公告)日：2019-12-31

申请号：US15321421

申请日：2015-06-01

申请人： TOYO TANSO CO., LTD.

发明人： Masato Shinohara ,  Yoshihisa Abe ,  Satoru Nogami

IPC分类号： B23Q3/00 ,  H01L21/687 ,  C23C16/04 ,  C23C16/458 ,  C23C16/56 ,  H01L21/205 ,  C23C8/20 ,  C23C16/06 ,  C23C16/32 ,  C30B25/12

摘要： Provided are a susceptor that, in forming a thin film on a wafer, can reduce impurities or the like adhering to the wafer and a method for manufacturing the same. A susceptor includes a base material (10) with a recess (11), a tantalum carbide layer (22) formed directly on a bottom surface (11a) and a side surface (11b) of the recess (11), and a silicon carbide layer (20) formed on a surface of the base material (10) except for the recess (11).

公开(公告)号：US20170162425A1

公开(公告)日：2017-06-08

申请号：US15321421

申请日：2015-06-01

申请人： TOYO TANSO CO., LTD.

发明人： Masato Shinohara ,  Yoshihisa Abe ,  Satoru Nogami

IPC分类号： H01L21/687 ,  C23C16/06 ,  C23C8/20 ,  C23C16/56 ,  C23C16/04 ,  C23C16/32

摘要： Provided are a susceptor that, in forming a thin film on a wafer, can reduce impurities or the like adhering to the wafer and a method for manufacturing the same. A susceptor includes a base material (10) with a recess (11), a tantalum carbide layer (22) formed directly on a bottom surface (11a) and a side surface (11b) of the recess (11), and a silicon carbide layer (20) formed on a surface of the base material (10) except for the recess (11).