公开(公告)号：US11355593B2

公开(公告)日：2022-06-07

申请号：US16135482

申请日：2018-09-19

申请人： TOYODA GOSEI CO., LTD.

发明人： Takatomi Izumi ,  Junya Nishii ,  Yuhei Ikemoto

IPC分类号： H01L29/20 ,  H01L21/28 ,  H01L21/02 ,  H01L29/417 ,  H01L29/49 ,  H01L29/423 ,  H01L29/78 ,  H01L29/51 ,  H01L21/3205

摘要： A semiconductor device comprises: a nitride semiconductor layer; an oxide insulating film formed to contact the nitride semiconductor layer; and a gate electrode formed to contact the oxide insulating film and made of metal nitride in a crystal orientation including at least one of the (200) orientation and the (220) orientation.

公开(公告)号：US20190103464A1

公开(公告)日：2019-04-04

申请号：US16135482

申请日：2018-09-19

申请人： TOYODA GOSEI CO., LTD.

发明人： Takatomi Izumi ,  Junya Nishii ,  Yuhei Ikemoto

IPC分类号： H01L29/20 ,  H01L21/28 ,  H01L21/02 ,  H01L29/423 ,  H01L29/417 ,  H01L29/49

摘要： A semiconductor device comprises: a nitride semiconductor layer; an oxide insulating film formed to contact the nitride semiconductor layer; and a gate electrode formed to contact the oxide insulating film and made of metal nitride in a crystal orientation including at least one of the (200) orientation and the (220) orientation.