公开(公告)号：US12174243B2

公开(公告)日：2024-12-24

申请号：US18065867

申请日：2022-12-14

Applicant: TRON FUTURE TECH INC.

Inventor： Yu-Jiu Wang ,  Hao-Chung Chou ,  Yue Ming Wu ,  Ta-Shun Chu

IPC: G01R31/20 ,  G01R1/067 ,  G01R31/28

Abstract: A method for manufacturing a first radio-frequency (RF) device, including: receiving a substrate having the first RF device, wherein the first RF device has a signal port for receiving or transmitting RF signals with an input impedance greater than ten times an input impedance of a testing tool; causing a probe assembly to connect to the signal port and the testing tool; and causing the probe assembly to connect to a first terminal of a resistive element having a resistance equal to the input impedance.