公开(公告)号：US20110136048A1

公开(公告)日：2011-06-09

申请号：US13028611

申请日：2011-02-16

申请人： Tadami SHIMIZU ,  Akio MISAKA ,  Masaru SASAGO

发明人： Tadami SHIMIZU ,  Akio MISAKA ,  Masaru SASAGO

IPC分类号： G03F1/00 ,  G03F7/20

CPC分类号： G03F1/26

摘要： A photomask includes: a transparent substrate having a transparent property against exposing light; a first light-shielding pattern formed on the transparent substrate and having a first dimension; a second light-shielding pattern formed on the transparent substrate and having a second dimension larger than the first dimension; and an opening provided in part of the transparent substrate where the first light-shielding pattern and the second light-shielding pattern are not formed. The first light-shielding pattern includes a first semi-light-shielding portion and an auxiliary pattern which is arranged within the first semi-light-shielding portion and allows the exposing light to pass through in an opposite phase with respect to the first semi-light-shielding portion. The second light-shielding pattern includes a second semi-light-shielding portion and a light-shielding portion which does not substantially allow the exposing light to pass through.

摘要翻译： 光掩模包括：具有抵抗曝光的透明性的透明基板; 形成在所述透明基板上并具有第一尺寸的第一遮光图案; 形成在所述透明基板上并且具有比所述第一尺寸大的第二尺寸的第二遮光图案; 以及设置在不形成第一遮光图案和第二遮光图案的透明基板的一部分中的开口。 第一遮光图案包括第一半遮光部分和辅助图案，该第一半遮光部分和辅助图案布置在第一半遮光部分内，并允许曝光光以相对于第一半遮光部分相反的方向通过。 遮光部。 第二遮光图案包括基本上不允许曝光光通过的第二半遮光部分和遮光部分。

公开(公告)号：US20080227038A1

公开(公告)日：2008-09-18

申请号：US12029944

申请日：2008-02-12

申请人： Masayuki ENDO ,  Masaru SASAGO

发明人： Masayuki ENDO ,  Masaru SASAGO

IPC分类号： G03F7/30

CPC分类号： G03F7/0035 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041

摘要： After formation of an underlayer film and an intermediate layer film, a resist pattern formed by the first pattern exposure with the first resist film and the second pattern exposure with the second resist film is transferred to the intermediate layer film. The underlayer film is etched using an intermediate layer pattern as a mask to form an underlayer film pattern. Herein, the first and second resist films are chemically amplified resist films. The second resist film contains a greater amount of additive which improves the sensitivity of the resist or which improves the alkaline solubility of resist exposed part.

摘要翻译： 在形成下层膜和中间层膜之后，将通过第一图案曝光形成的抗蚀图案与第一抗蚀剂膜和第二图案曝光用第二抗蚀剂膜转印到中间层膜。 使用中间层图案作为掩模蚀刻下层膜，以形成下层膜图案。 这里，第一和第二抗蚀剂膜是化学放大抗蚀剂膜。 第二抗蚀剂膜含有更多量的添加剂，其提高了抗蚀剂的灵敏度或改善了抗蚀剂暴露部分的碱溶性。

公开(公告)号：US20080286687A1

公开(公告)日：2008-11-20

申请号：US11968826

申请日：2008-01-03

申请人： Masayuki ENDO ,  Masaru SASAGO

发明人： Masayuki ENDO ,  Masaru SASAGO

IPC分类号： G03F7/004 ,  C08K5/29 ,  G03F7/26

CPC分类号： G03F7/0045 ,  G03F7/0392 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/38

摘要： A resist film made of a chemically amplified resist material including a polymer; a photo-acid generator and carbamoyl oxime is formed on a substrate. Subsequently, pattern exposure is performed by selectively irradiating the resist film with exposing light. After the pattern exposure, the resist film is baked, and the baked resist film is developed, so as to form a resist pattern made of the resist film.

摘要翻译： 由包含聚合物的化学放大抗蚀剂材料制成的抗蚀剂膜; 在基材上形成光酸产生剂和氨基甲酰肟。 随后，通过用曝光光选择性地照射抗蚀剂膜来进行图案曝光。 在图案曝光之后，烘烤抗蚀剂膜，并且烘烤的抗蚀剂膜被显影，以形成由抗蚀剂膜制成的抗蚀剂图案。

公开(公告)号：US20110186544A1

公开(公告)日：2011-08-04

申请号：US13085954

申请日：2011-04-13

申请人： Masayuki ENDOU ,  Masaru SASAGO

发明人： Masayuki ENDOU ,  Masaru SASAGO

IPC分类号： B05D3/04 ,  B05D3/02 ,  B05D1/36

CPC分类号： B81C1/00031 ,  B29C71/02 ,  B29C2071/022 ,  B29K2995/0093 ,  G03F7/0002

摘要： A block copolymer film is formed on a substrate. Then, the block copolymer film is annealed in an inert-gas atmosphere, for example, in a neon atmosphere. This places the outside (mainly the upper portion) of the block copolymer film in a nonpolar state, thereby strongly drawing, for example, a monomer unit having hydrophobic characteristics outside the block copolymer film to accelerate self-assembly. This results in an improvement in throughput in self-assembled pattern formation of the block copolymer film.

摘要翻译： 在基材上形成嵌段共聚物膜。 然后，在惰性气体气氛中，例如在氖气氛中对嵌段共聚物膜进行退火。 这使得嵌段共聚物膜的外部（主要是上部）处于非极性状态，从而强烈地拉伸例如在嵌段共聚物膜外具有疏水特性的单体单元以加速自组装。 这导致嵌段共聚物膜的自组装图案形成中的通过量的改善。

公开(公告)号：US20080193883A1

公开(公告)日：2008-08-14

申请号：US11949338

申请日：2007-12-03

申请人： Masayuki ENDO ,  Masaru SASAGO

发明人： Masayuki ENDO ,  Masaru SASAGO

IPC分类号： C08G63/08 ,  G03F7/20

CPC分类号： G03F7/2041 ,  C08J5/18 ,  C08J2367/04 ,  G03F7/11 ,  Y10S430/162

摘要： A resist film is formed on a substrate, and a barrier film including a compound whose alkali-insoluble property is changed to an alkali-soluble property through molecular structure change caused by an alkaline solution is formed on the resist film. Thereafter, with an immersion liquid provided on the barrier film, pattern exposure is performed by selectively irradiating the resist film through the barrier film with exposing light. After the pattern exposure, the barrier film is removed and the resist film is developed. Thus, a resist pattern made of the resist film is formed.

摘要翻译： 在基板上形成抗蚀剂膜，并且在抗蚀剂膜上形成阻挡膜，该阻挡膜包含由碱溶性由碱溶液引起的分子结构变化而变为碱溶性的化合物。 此后，通过设置在阻挡膜上的浸没液体，通过用曝光光选择性地照射阻挡膜来进行图案曝光。 在图案曝光之后，去除阻挡膜并且形成抗蚀剂膜。 因此，形成由抗蚀剂膜制成的抗蚀剂图案。

公开(公告)号：US20100183988A1

公开(公告)日：2010-07-22

申请号：US12749289

申请日：2010-03-29

申请人： Masayuki ENDO ,  Masaru SASAGO

发明人： Masayuki ENDO ,  Masaru SASAGO

IPC分类号： G03F7/20

CPC分类号： G03F7/70341 ,  G03F7/0395 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/70991

摘要： An exposure system includes a cleaning unit for cleaning a surface of a resist film formed on a wafer with a cleaning fluid and an exposure unit for performing pattern exposure with an immersion liquid provided between the resist film and a projection lens.

摘要翻译： 曝光系统包括用清洁液清洗形成在晶片上的抗蚀膜的表面的清洁单元和用于在设置在抗蚀剂膜和投影透镜之间的浸渍液进行图案曝光的曝光单元。