公开(公告)号：US20130061804A1

公开(公告)日：2013-03-14

申请号：US13599082

申请日：2012-08-30

申请人： Tadashi ENOMOTO ,  Mitsuhiro TACHIBANA ,  Haruhiko FURUYA ,  Kentaro OSHIMO

发明人： Tadashi ENOMOTO ,  Mitsuhiro TACHIBANA ,  Haruhiko FURUYA ,  Kentaro OSHIMO

IPC分类号： C23C16/455

CPC分类号： H01L21/68764 ,  C23C16/455 ,  C23C16/45506 ,  C23C16/45551 ,  H01L21/6719 ,  H01L21/68771

摘要： A substrate processing apparatus includes a processing chamber; process areas each of which supplies a reaction gas; a turntable that rotates to cause a substrate to pass through the process areas; a gas nozzle provided in one of the process areas; a separating area that supplies a separation gas to separate atmospheres of the process areas; and a cover part configured to cover the gas nozzle and cause the reaction gas supplied from the gas nozzle to remain around the gas nozzle. The cover part includes an upstream side wall, a downstream side wall, and an upper wall. The cover part also includes a guide surface configured to guide the separation gas to flow over a lower part of the upstream side wall to a space above the upper wall. The distance between the gas nozzle and the upstream side wall is greater than or equal to 8 mm.

摘要翻译： 基板处理装置包括处理室; 处理区域各自提供反应气体; 旋转以使基底通过处理区域的转盘; 设置在所述处理区域之一中的气体喷嘴; 分离区域，其供应分离气体以分离工艺区域的气氛; 以及盖部，其构造成覆盖所述气体喷嘴，并且使从所述气体喷嘴供给的反应气体保持在所述气体喷嘴周围。 盖部包括上游侧壁，下游侧壁和上壁。 盖部分还包括引导表面，该引导表面构造成引导分离气体在上游侧壁的下部流动到上壁上方的空间。 气体喷嘴与上游侧壁之间的距离大于或等于8mm。