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公开(公告)号:US20050067713A1
公开(公告)日:2005-03-31
申请号:US10964714
申请日:2004-10-15
申请人: Tadayoshi Mutta , Jin Tachikawa , Riichi Saito , Tadanori Suto , Manabu Takayama , Hiroyuki Morimoto
发明人: Tadayoshi Mutta , Jin Tachikawa , Riichi Saito , Tadanori Suto , Manabu Takayama , Hiroyuki Morimoto
IPC分类号: H01L23/52 , H01L21/3205 , H01L21/768 , H01L23/48 , H01L21/84
CPC分类号: H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/09701 , H01L2924/12044 , H01L2924/00
摘要: The semiconductor device of the present invention comprises a substrate; at least one through hole formed through the substrate between front and back surfaces of the substrate; an electrical connection portion formed by a semiconductor process on at least one surface of the front and back surfaces of the substrate in a vicinity of an end opening of the through hole; an insulating layer formed of an organic material on an inside surface of the through hole; and an electroconductive layer formed on an inside surface of the insulating layer, wherein the electrical connection portion is electrically connected to the electroconductive layer to be electrically connected to a side of the other surface of the substrate.
摘要翻译: 本发明的半导体器件包括衬底; 在所述基板的前表面和后表面之间穿过所述基板形成的至少一个通孔; 在所述通孔的端部开口附近,在所述基板的前表面和后表面的至少一个表面上由半导体工艺形成的电连接部分; 在所述通孔的内表面上由有机材料形成的绝缘层; 以及形成在所述绝缘层的内表面上的导电层,其中所述电连接部分电连接到所述导电层以与所述基板的另一表面的一侧电连接。