Zinc oxide-based conductor
    2.
    发明授权
    Zinc oxide-based conductor 有权
    氧化锌基导体

    公开(公告)号:US08241531B2

    公开(公告)日:2012-08-14

    申请号:US12824922

    申请日:2010-06-28

    IPC分类号: H01B1/08 H01L35/14

    摘要: A zinc oxide-based conductor includes ZnO co-doped with gallium and manganese. Preferably, the doping concentration of the gallium ranges from 0.01 at % to 10 at % and the doping concentration of the manganese ranges from 0.01 at % to 5 at %. More preferably, the doping concentration of the gallium ranges from 2 at % to 8 at % and the doping concentration of the manganese ranges from 0.1 at % to 2 at %. Still more preferably, the doping concentration of the gallium ranges from 4 at % to 6 at % and the doping concentration of the manganese ranges from 0.2 at % to 1.5 at %. The zinc oxide-based conductor is a transparent conductor that is used as an electrode of a solar cell or a liquid crystal display.

    摘要翻译: 基于氧化锌的导体包括与镓和锰共掺的ZnO。 优选地,镓的掺杂浓度范围为0.01at%至10at%,锰的掺杂浓度范围为0.01at%至5at%。 更优选地,镓的掺杂浓度范围为2at%至8at%,锰的掺杂浓度范围为0.1at%至2at%。 更优选地,镓的掺杂浓度范围为4at%至6at%,锰的掺杂浓度范围为0.2at%至1.5at%。 氧化锌系导体是用作太阳能电池或液晶显示器的电极的透明导体。

    ZINC OXIDE-BASED CONDUCTOR
    3.
    发明申请
    ZINC OXIDE-BASED CONDUCTOR 有权
    基于氧化锌的导电体

    公开(公告)号:US20110001095A1

    公开(公告)日:2011-01-06

    申请号:US12824922

    申请日:2010-06-28

    IPC分类号: H01B1/02

    摘要: A zinc oxide-based conductor includes ZnO co-doped with gallium and manganese. Preferably, the doping concentration of the gallium ranges from 0.01 at % to 10 at % and the doping concentration of the manganese ranges from 0.01 at % to 5 at %. More preferably, the doping concentration of the gallium ranges from 2 at % to 8 at % and the doping concentration of the manganese ranges from 0.1 at % to 2 at %. Still more preferably, the doping concentration of the gallium ranges from 4 at % to 6 at % and the doping concentration of the manganese ranges from 0.2 at % to 1.5 at %. The zinc oxide-based conductor is a transparent conductor that is used as an electrode of a solar cell or a liquid crystal display.

    摘要翻译: 基于氧化锌的导体包括与镓和锰共掺的ZnO。 优选地,镓的掺杂浓度范围为0.01at%至10at%,锰的掺杂浓度范围为0.01at%至5at%。 更优选地,镓的掺杂浓度范围为2at%至8at%,锰的掺杂浓度范围为0.1at%至2at%。 更优选地,镓的掺杂浓度范围为4at%至6at%,锰的掺杂浓度范围为0.2at%至1.5at%。 氧化锌系导体是用作太阳能电池或液晶显示器的电极的透明导体。