公开(公告)号：US20050056223A1

公开(公告)日：2005-03-17

申请号：US10970172

申请日：2004-10-21

申请人： Tae-Wan Lee ,  Kyu-Jin Choi ,  Yong-Ho Lee

发明人： Tae-Wan Lee ,  Kyu-Jin Choi ,  Yong-Ho Lee

IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/46 ,  C23C16/00

CPC分类号： C23C16/46 ,  C23C16/4404 ,  C23C16/4405

摘要： A cold wall chemical vapor deposition apparatus includes: a chamber; a susceptor movable up and down in the chamber by a driving means, the susceptor including a heater and an internal electrode; a heat reflector over the susceptor, the heat reflector reflecting a heat emitted from the heater back to a wafer on the susceptor and serving as an correspondent electrode to the internal electrode; a heater control unit connected to the wafer, the heater and the driving means, the heater control unit sensing a temperature of the wafer, the susceptor moving according to the temperature; a gas supply unit supplying gases to the chamber; and a power source applying a voltage to the chamber.

摘要翻译： 冷壁化学气相沉积设备包括：室; 感受器通过驱动装置在所述腔室中上下移动，所述基座包括加热器和内部电极; 在所述基座上的热反射器，所述热反射器将从所述加热器发射的热反射回所述基座上的晶片，并且用作与所述内部电极相对应的电极; 连接到晶片的加热器控制单元，加热器和驱动装置，加热器控制单元感测晶片的温度，基座根据温度移动; 气体供应单元，其向所述室提供气体; 以及向腔室施加电压的电源。

公开(公告)号：US06857388B2

公开(公告)日：2005-02-22

申请号：US10124252

申请日：2002-04-17

申请人： Tae-Wan Lee ,  Kyu-Jin Choi ,  Yong-Ho Lee

发明人： Tae-Wan Lee ,  Kyu-Jin Choi ,  Yong-Ho Lee

IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/46 ,  C23C16/00 ,  H01L21/00

CPC分类号： C23C16/46 ,  C23C16/4404 ,  C23C16/4405

摘要： A cold wall chemical vapor deposition apparatus includes: a chamber; a susceptor movable up and down in the chamber by a driving means, the susceptor including a heater and an internal electrode; a heat reflector over the susceptor, the heat reflector reflecting a heat emitted from the heater back to a wafer on the susceptor and serving as an correspondent electrode to the internal electrode; a heater control unit connected to the wafer, the heater and the driving means, the heater control unit sensing a temperature of the wafer, the susceptor moving according to the temperature; a gas supply unit supplying gases to the chamber; and a power source applying a voltage to the chamber.

摘要翻译： 冷壁化学气相沉积设备包括：室; 感受器通过驱动装置在所述腔室中上下移动，所述基座包括加热器和内部电极; 在所述基座上的热反射器，所述热反射器将从所述加热器发射的热反射回所述基座上的晶片，并且用作与所述内部电极相对应的电极; 连接到晶片的加热器控制单元，加热器和驱动装置，加热器控制单元感测晶片的温度，基座根据温度移动; 气体供应单元，其向所述室提供气体; 以及向腔室施加电压的电源。

公开(公告)号：US06887794B2

公开(公告)日：2005-05-03

申请号：US10331794

申请日：2002-12-30

申请人： Kyu-Jin Choi

发明人： Kyu-Jin Choi

IPC分类号： H01L21/20 ,  C23C16/02 ,  C30B25/02 ,  H01L21/306 ,  H01L21/302

CPC分类号： H01L21/02046 ,  C23C16/0245 ,  C30B25/02 ,  C30B29/06 ,  H01J37/32082 ,  H01J2237/335

摘要： A pre-cleaning method of a substrate for a semiconductor device includes preparing a chamber, the chamber including a plasma electrode at an outside of the chamber, a power supplying system connected to the plasma electrode, a susceptor in the chamber, and an injector injecting gases into the chamber, equipping a metallic net in the chamber, the metallic net over the susceptor and grounded, disposing a substrate on the susceptor, and injecting a hydrogen gas into the chamber through the injector and supplying radio frequency power to the plasma electrode, thereby removing an oxide layer on the substrate.

摘要翻译： 用于半导体器件的衬底的预清洁方法包括制备腔室，该室包括在室外的等离子体电极，连接到等离子体电极的电源系统，腔室中的基座以及注射器 气体进入腔室，在金属网中装有金属网，并且接地，并将衬底放置在基座上，并通过注射器将氢气注入腔室，并向等离子体电极提供射频电力， 从而去除衬底上的氧化物层。