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    Pre-cleaning method of substrate for semiconductor device
    4.
    发明授权
    Pre-cleaning method of substrate for semiconductor device 失效
    半导体器件基板的预清洗方法

    公开(公告)号：US06887794B2

    公开(公告)日：2005-05-03

    申请号：US10331794

    申请日：2002-12-30

    申请人： Kyu-Jin Choi

    发明人： Kyu-Jin Choi

    IPC分类号： H01L21/20 ,  C23C16/02 ,  C30B25/02 ,  H01L21/306 ,  H01L21/302

    CPC分类号： H01L21/02046 ,  C23C16/0245 ,  C30B25/02 ,  C30B29/06 ,  H01J37/32082 ,  H01J2237/335

    摘要： A pre-cleaning method of a substrate for a semiconductor device includes preparing a chamber, the chamber including a plasma electrode at an outside of the chamber, a power supplying system connected to the plasma electrode, a susceptor in the chamber, and an injector injecting gases into the chamber, equipping a metallic net in the chamber, the metallic net over the susceptor and grounded, disposing a substrate on the susceptor, and injecting a hydrogen gas into the chamber through the injector and supplying radio frequency power to the plasma electrode, thereby removing an oxide layer on the substrate.

    摘要翻译： 用于半导体器件的衬底的预清洁方法包括制备腔室，该室包括在室外的等离子体电极，连接到等离子体电极的电源系统，腔室中的基座以及注射器 气体进入腔室，在金属网中装有金属网，并且接地，并将衬底放置在基座上，并通过注射器将氢气注入腔室，并向等离子体电极提供射频电力， 从而去除衬底上的氧化物层。

    Cold wall chemical vapor deposition apparatus with a heater control unit
    5.
    发明授权
    Cold wall chemical vapor deposition apparatus with a heater control unit 失效
    具有加热器控制单元的冷壁化学气相沉积设备

    公开(公告)号：US06857388B2

    公开(公告)日：2005-02-22

    申请号：US10124252

    申请日：2002-04-17

    申请人： Tae-Wan Lee ,  Kyu-Jin Choi ,  Yong-Ho Lee

    发明人： Tae-Wan Lee ,  Kyu-Jin Choi ,  Yong-Ho Lee

    IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/46 ,  C23C16/00 ,  H01L21/00

    CPC分类号： C23C16/46 ,  C23C16/4404 ,  C23C16/4405

    摘要： A cold wall chemical vapor deposition apparatus includes: a chamber; a susceptor movable up and down in the chamber by a driving means, the susceptor including a heater and an internal electrode; a heat reflector over the susceptor, the heat reflector reflecting a heat emitted from the heater back to a wafer on the susceptor and serving as an correspondent electrode to the internal electrode; a heater control unit connected to the wafer, the heater and the driving means, the heater control unit sensing a temperature of the wafer, the susceptor moving according to the temperature; a gas supply unit supplying gases to the chamber; and a power source applying a voltage to the chamber.

    摘要翻译： 冷壁化学气相沉积设备包括：室; 感受器通过驱动装置在所述腔室中上下移动，所述基座包括加热器和内部电极; 在所述基座上的热反射器，所述热反射器将从所述加热器发射的热反射回所述基座上的晶片，并且用作与所述内部电极相对应的电极; 连接到晶片的加热器控制单元，加热器和驱动装置，加热器控制单元感测晶片的温度，基座根据温度移动; 气体供应单元，其向所述室提供气体; 以及向腔室施加电压的电源。

    Cold wall chemical vapor deposition apparatus and cleaning method of a chamber for the same
    6.
    发明申请
    Cold wall chemical vapor deposition apparatus and cleaning method of a chamber for the same 审中-公开
    冷壁化学气相沉积装置及其室的清洗方法

    公开(公告)号：US20050056223A1

    公开(公告)日：2005-03-17

    申请号：US10970172

    申请日：2004-10-21

    申请人： Tae-Wan Lee ,  Kyu-Jin Choi ,  Yong-Ho Lee

    发明人： Tae-Wan Lee ,  Kyu-Jin Choi ,  Yong-Ho Lee

    IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/46 ,  C23C16/00

    CPC分类号： C23C16/46 ,  C23C16/4404 ,  C23C16/4405

    摘要： A cold wall chemical vapor deposition apparatus includes: a chamber; a susceptor movable up and down in the chamber by a driving means, the susceptor including a heater and an internal electrode; a heat reflector over the susceptor, the heat reflector reflecting a heat emitted from the heater back to a wafer on the susceptor and serving as an correspondent electrode to the internal electrode; a heater control unit connected to the wafer, the heater and the driving means, the heater control unit sensing a temperature of the wafer, the susceptor moving according to the temperature; a gas supply unit supplying gases to the chamber; and a power source applying a voltage to the chamber.

    摘要翻译： 冷壁化学气相沉积设备包括：室; 感受器通过驱动装置在所述腔室中上下移动，所述基座包括加热器和内部电极; 在所述基座上的热反射器，所述热反射器将从所述加热器发射的热反射回所述基座上的晶片，并且用作与所述内部电极相对应的电极; 连接到晶片的加热器控制单元，加热器和驱动装置，加热器控制单元感测晶片的温度，基座根据温度移动; 气体供应单元，其向所述室提供气体; 以及向腔室施加电压的电源。

    APPARATUS FOR MANUFACTURING SEMICONDUCTOR
    7.
    发明申请
    APPARATUS FOR MANUFACTURING SEMICONDUCTOR 审中-公开
    制造半导体的装置

    公开(公告)号：US20120129321A1

    公开(公告)日：2012-05-24

    申请号：US13361907

    申请日：2012-01-30

    申请人： Cheol Hoon YANG ,  Kyu Jin CHOI ,  Yong Han JEON ,  Euy Kyu LEE ,  Tae Wan LEE

    发明人： Cheol Hoon YANG ,  Kyu Jin CHOI ,  Yong Han JEON ,  Euy Kyu LEE ,  Tae Wan LEE

    IPC分类号： H01L21/20

    CPC分类号： H01L21/67069 ,  C23C16/0245 ,  C23C16/507 ,  H01J37/32522 ,  H01L21/67098

    摘要： A semiconductor device manufacturing apparatus includes a chamber including a reaction space, a substrate disposing unit configured to dispose a substrate within the chamber, a first heating unit configured to optically heat the reaction space and disposed under the chamber, a second heating unit configured to heat the reaction space through resistive heating and disposed over the chamber, and a plasma generating unit configured to generate plasma in the reaction space. Since the apparatus generates the plasma using the plasma generating unit disposed over the chamber, the deposition process based on heating and the etch process based on the plasma can be simultaneously performed in one single chamber.

    摘要翻译： 一种半导体器件制造装置，包括：包括反应空间的腔室，被配置为在所述腔室内设置基板的基板设置单元，配置为对所述反应空间进行光学加热并设置在所述室下方的第一加热单元， 所述反应空间通过电阻加热并设置在所述室上，等离子体产生单元被配置为在所述反应空间中产生等离子体。 由于该装置使用设置在室上的等离子体产生单元来产生等离子体，所以基于加热的沉积工艺和基于等离子体的蚀刻工艺可以在一个单一的室中同时进行。

    APPARATUS FOR MANUFACTURING SEMICONDUCTOR
    8.
    发明申请
    APPARATUS FOR MANUFACTURING SEMICONDUCTOR 审中-公开
    制造半导体的装置

    公开(公告)号：US20100006539A1

    公开(公告)日：2010-01-14

    申请号：US12259257

    申请日：2008-10-27

    申请人： Cheol Hoon YANG ,  Kyu Jin CHOI ,  Yong Han JEON ,  Euy Kyu LEE ,  Tae Wan LEE

    发明人： Cheol Hoon YANG ,  Kyu Jin CHOI ,  Yong Han JEON ,  Euy Kyu LEE ,  Tae Wan LEE

    IPC分类号： H01L21/3065 ,  C23C16/00

    CPC分类号： H01L21/67069 ,  C23C16/0245 ,  C23C16/507 ,  H01J37/32522 ,  H01L21/67098

    摘要： A semiconductor device manufacturing apparatus includes a chamber including a reaction space, a substrate disposing unit configured to dispose a substrate within the chamber, a first heating unit configured to optically heat the reaction space and disposed under the chamber, a second heating unit configured to heat the reaction space through resistive heating and disposed over the chamber, and a plasma generating unit configured to generate plasma in the reaction space. Since the apparatus generates the plasma using the plasma generating unit disposed over the chamber, the deposition process based on heating and the etch process based on the plasma can be simultaneously performed in one single chamber.

    摘要翻译： 一种半导体器件制造装置，包括：包括反应空间的腔室，被配置为在所述腔室内设置基板的基板设置单元，配置为对所述反应空间进行光学加热并设置在所述室下方的第一加热单元， 所述反应空间通过电阻加热并设置在所述室上，等离子体产生单元被配置为在所述反应空间中产生等离子体。 由于该装置使用设置在室上的等离子体产生单元来产生等离子体，所以基于加热的沉积工艺和基于等离子体的蚀刻工艺可以在一个单一的室中同时进行。