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公开(公告)号:US20130020463A1
公开(公告)日:2013-01-24
申请号:US13550838
申请日:2012-07-17
申请人: Tae-Yon Lee , Yoon-Dong Park , Yong-Jei Lee , Seoung-Hyun Kim , Joo-Yeong Gong , Sung-Kwon Hong
发明人: Tae-Yon Lee , Yoon-Dong Park , Yong-Jei Lee , Seoung-Hyun Kim , Joo-Yeong Gong , Sung-Kwon Hong
IPC分类号: G01J1/44
CPC分类号: H04N5/357 , H04N5/3696 , H04N5/3745 , H04N5/378
摘要: In a method of operating an image sensor, a noise voltage of a floating diffusion region is sampled after a reset voltage is applied to the floating diffusion region. A storage region, in which a photo-charge is stored, is electrically connected to the floating diffusion region after sampling the noise voltage, and a demodulation voltage of the floating diffusion region is sampled after the storage region and the floating diffusion region are electrically-connected. A voltage is determined based on the noise voltage and the demodulation voltage.
摘要翻译: 在操作图像传感器的方法中,在对浮动扩散区域施加复位电压之后,对浮动扩散区域的噪声电压进行采样。 在对噪声电压进行采样之后,存储光电荷的存储区域与浮动扩散区域电连接,并且在存储区域和浮动扩散区域电气化之后对浮动扩散区域的解调电压进行采样, 连接的。 基于噪声电压和解调电压确定电压。
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公开(公告)号:US09225922B2
公开(公告)日:2015-12-29
申请号:US13550838
申请日:2012-07-17
申请人: Tae-Yon Lee , Yoon-Dong Park , Yong-Jei Lee , Seoung-Hyun Kim , Joo-Yeong Gong , Sung-Kwon Hong
发明人: Tae-Yon Lee , Yoon-Dong Park , Yong-Jei Lee , Seoung-Hyun Kim , Joo-Yeong Gong , Sung-Kwon Hong
IPC分类号: H04N5/357 , H04N5/378 , H04N5/369 , H04N5/3745
CPC分类号: H04N5/357 , H04N5/3696 , H04N5/3745 , H04N5/378
摘要: In a method of operating an image sensor, a noise voltage of a floating diffusion region is sampled after a reset voltage is applied to the floating diffusion region. A storage region, in which a photo-charge is stored, is electrically connected to the floating diffusion region after sampling the noise voltage, and a demodulation voltage of the floating diffusion region is sampled after the storage region and the floating diffusion region are electrically-connected. A voltage is determined based on the noise voltage and the demodulation voltage.
摘要翻译: 在操作图像传感器的方法中,在对浮动扩散区域施加复位电压之后,对浮动扩散区域的噪声电压进行采样。 在对噪声电压进行采样之后,存储光电荷的存储区域与浮动扩散区域电连接,并且在存储区域和浮动扩散区域电气化之后对浮动扩散区域的解调电压进行采样, 连接的。 基于噪声电压和解调电压确定电压。
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公开(公告)号:US20090166792A1
公开(公告)日:2009-07-02
申请号:US12344540
申请日:2008-12-28
申请人: Hee-Sung Shim , Seoung-Hyun Kim , Joon Hwang , Kwang-Soo Kim , Jin-Su Han
发明人: Hee-Sung Shim , Seoung-Hyun Kim , Joon Hwang , Kwang-Soo Kim , Jin-Su Han
IPC分类号: H01L27/146 , H01L21/329
CPC分类号: H01L27/1469 , H01L27/14634 , H01L27/14665
摘要: Embodiments relate to an image sensor and a method of forming an image sensor. According to embodiments, an image sensor may include a first substrate and a photodiode. A circuitry including a metal interconnection may be formed on and/or over the first substrate. The photodiode may be formed over a first substrate, and may contact the metal interconnection. The circuitry of the first substrate may include a first transistor, a second transistor, an electrical junction region, and a first conduction type region. The first and second transistors may be formed over the first substrate. According to embodiments, an electrical junction region may be formed between the first transistor and the second transistor. The first conduction type region may be formed at one side of the second transistor, and may be connected to the metal interconnection.
摘要翻译: 实施例涉及图像传感器和形成图像传感器的方法。 根据实施例,图像传感器可以包括第一基板和光电二极管。 包括金属互连的电路可以形成在第一基板上和/或上方。 光电二极管可以形成在第一基板上,并且可以接触金属互连。 第一衬底的电路可以包括第一晶体管,第二晶体管,电结区域和第一导电类型区域。 第一和第二晶体管可以形成在第一衬底上。 根据实施例,可以在第一晶体管和第二晶体管之间形成电连接区域。 第一导电类型区域可以形成在第二晶体管的一侧,并且可以连接到金属互连。
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公开(公告)号:US07880196B2
公开(公告)日:2011-02-01
申请号:US12344540
申请日:2008-12-28
申请人: Hee-Sung Shim , Seoung-Hyun Kim , Joon Hwang , Kwang-Soo Kim , Jin-Su Han
发明人: Hee-Sung Shim , Seoung-Hyun Kim , Joon Hwang , Kwang-Soo Kim , Jin-Su Han
IPC分类号: H01L31/0328
CPC分类号: H01L27/1469 , H01L27/14634 , H01L27/14665
摘要: Embodiments relate to an image sensor and a method of forming an image sensor. According to embodiments, an image sensor may include a first substrate and a photodiode. A circuitry including a metal interconnection may be formed on and/or over the first substrate. The photodiode may be formed over a first substrate, and may contact the metal interconnection. The circuitry of the first substrate may include a first transistor, a second transistor, an electrical junction region, and a first conduction type region. The first and second transistors may be formed over the first substrate. According to embodiments, an electrical junction region may be formed between the first transistor and the second transistor. The first conduction type region may be formed at one side of the second transistor, and may be connected to the metal interconnection.
摘要翻译: 实施例涉及图像传感器和形成图像传感器的方法。 根据实施例,图像传感器可以包括第一基板和光电二极管。 包括金属互连的电路可以形成在第一基板上和/或上方。 光电二极管可以形成在第一基板上,并且可以接触金属互连。 第一衬底的电路可以包括第一晶体管,第二晶体管,电结区域和第一导电类型区域。 第一和第二晶体管可以形成在第一衬底上。 根据实施例,可以在第一晶体管和第二晶体管之间形成电连接区域。 第一导电类型区域可以形成在第二晶体管的一侧,并且可以连接到金属互连。
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公开(公告)号:US20090179293A1
公开(公告)日:2009-07-16
申请号:US12344536
申请日:2008-12-28
申请人: Hee-Sung Shim , Seoung-Hyun Kim , Joon Hwang , Kwang-Soo Kim , Jin-Su Han
发明人: Hee-Sung Shim , Seoung-Hyun Kim , Joon Hwang , Kwang-Soo Kim , Jin-Su Han
IPC分类号: H01L31/105 , H01L31/103 , H01L21/768
CPC分类号: H01L27/14692 , H01L27/14609 , H01L27/14634 , H01L27/1465
摘要: Embodiments relate to an image sensor. According to embodiments, an image sensor may include a circuitry, a first substrate, a photodiode, a metal interconnection, and an electrical junction region. The circuitry and the metal interconnection may be formed on and/or over the first substrate. The photodiode may contact the metal interconnection and may be formed on and/or over the first substrate. The circuitry may include an electrical junction region on and/or over the first substrate and a first conduction type region on and/or over the electrical junction region and connected to the metal interconnection. According to embodiments, an image sensor and a manufacturing method thereof may provide a vertical integration of circuitry and a photodiode.
摘要翻译: 实施例涉及图像传感器。 根据实施例,图像传感器可以包括电路,第一衬底,光电二极管,金属互连和电连接区域。 电路和金属互连可以形成在第一基板上和/或上方。 光电二极管可以接触金属互连并且可以形成在第一基板上和/或上方。 电路可以包括在第一基板上和/或上方的电连接区域,以及在电连接区域上和/或上方的第一导电类型区域并且连接到金属互连。 根据实施例,图像传感器及其制造方法可以提供电路和光电二极管的垂直集成。
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公开(公告)号:US20090166695A1
公开(公告)日:2009-07-02
申请号:US12344553
申请日:2008-12-28
申请人: Seoung-Hyun Kim
发明人: Seoung-Hyun Kim
IPC分类号: H01L31/112 , H01L31/18
CPC分类号: H01L27/14603 , H01L27/14612 , H01L27/14689
摘要: A method for manufacturing an image sensor having a peripheral circuit unit and a pixel unit includes forming a device isolation layer that defines an active area in the pixel area, on a semiconductor substrate, forming a gate pattern on the active area of the semiconductor substrate, forming a photodiode area at one side of the gate pattern in the semiconductor substrate, vapor-depositing a plurality of dielectric layers on the whole surface of the substrate including the gate pattern, forming a spacer at lateral sides of the gate pattern by removing part of the plurality of dielectric layers by dry etching, and removing the other dielectric layer disposed between the lowermost dielectric layer and the uppermost dielectric layer by wet etching, while leaving a lowermost dielectric layer among the plurality of dielectric layers on the substrate where a floating diffusion area will be formed.
摘要翻译: 一种用于制造具有外围电路单元和像素单元的图像传感器的方法包括在半导体衬底上形成在像素区域中限定有源区域的器件隔离层,在半导体衬底的有源区上形成栅极图案, 在半导体衬底中的栅极图案的一侧形成光电二极管区域,在包括栅极图案的衬底的整个表面上气相沉积多个电介质层,在栅极图案的侧面形成间隔物, 通过干法蚀刻形成多个电介质层,并且通过湿法蚀刻去除设置在最下面的电介质层和最上面的电介质层之间的另一介质层,同时留下衬底上的多个电介质层中的最下层的电介质层,其中浮动扩散区 将形成。
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