公开(公告)号：US20050022934A1

公开(公告)日：2005-02-03

申请号：US10823547

申请日：2004-04-14

申请人： Tae-yong Kwon ,  Sang-jean Jeon ,  Sang-chul Han ,  Hyung-chul Cho

发明人： Tae-yong Kwon ,  Sang-jean Jeon ,  Sang-chul Han ,  Hyung-chul Cho

IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/3065 ,  C23F1/00

CPC分类号： H01J37/32082 ,  H01J37/32541

摘要： A plasma etching apparatus having an upper electrode, a lower electrode corresponding to the upper electrode, to place a substrate on, and a high frequency power generator to generate plasma by applying high frequency power to the upper electrode or the lower electrode, wherein a distance between the upper electrode and the lower electrode varies discontinuously on a portion of opposite surfaces of the electrodes by varying the shape of the upper electrode.

摘要翻译： 一种等离子体蚀刻装置，其具有上电极，与上电极对应的下电极，以将基板放置在其上，高频发电机通过向上电极或下电极施加高频电力而产生等离子体， 通过改变上电极的形状，在上电极和下电极之间的电极的相对表面的一部分上不连续地变化。

公开(公告)号：US09646891B2

公开(公告)日：2017-05-09

申请号：US14605017

申请日：2015-01-26

申请人： Jung-gil Yang ,  Tae-yong Kwon ,  Xingui Zhang ,  Sang-su Kim

发明人： Jung-gil Yang ,  Tae-yong Kwon ,  Xingui Zhang ,  Sang-su Kim

IPC分类号： H01L21/8238 ,  H01L29/207 ,  H01L27/092 ,  H01L29/78 ,  H01L29/49 ,  H01L29/201 ,  H01L29/20 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/06 ,  H01L21/28 ,  H01L29/66

CPC分类号： H01L21/823828 ,  H01L21/28264 ,  H01L21/823842 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/092 ,  H01L27/0922 ,  H01L27/0924 ,  H01L27/0928 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/207 ,  H01L29/4966 ,  H01L29/66522 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/7848 ,  H01L29/785

摘要： Example embodiments relate to a metal-oxide semiconductor field effect transistor (MOSFET) of a high performance operating with a necessary threshold voltage while including a channel region formed based on a group III-V compound, and a method of manufacturing the MOSFET. The MOSFET includes a substrate, a semiconductor layer including a group III-V compound on the substrate, and a gate structure disposed on the semiconductor layer, and including a gate electrode formed based on metal and undergone an ion implantation process.