公开(公告)号：US20240355583A1

公开(公告)日：2024-10-24

申请号：US18431163

申请日：2024-02-02

申请人： Samsung Electronics Co., Ltd.

发明人： Naohiko OKUNISHI ,  Hyeong Mo KANG ,  Nam Kyun KIM ,  Seong Sik NAM ,  Seung Bo SHIM

IPC分类号： H01J37/32 ,  C23C16/455 ,  C23C16/458 ,  C23C16/509 ,  C23C16/52

CPC分类号： H01J37/32137 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32183 ,  H01J37/32541

摘要： A plasma processing apparatus comprises a shower head configured to receive an electrode therein, and a variable impedance controller on the shower head. The variable impedance controller includes a first member spaced apart from the shower head and arranged along a circumference of the shower head, and a second member on the first member and configured to rotate. The variable impedance controller is configured to control an impedance by changing the impedance resulting from the first member and the second member as at least one contact point between the first member and the second member is changed according to rotation of the second member.

公开(公告)号：US12087556B2

公开(公告)日：2024-09-10

申请号：US17356195

申请日：2021-06-23

申请人： KIOXIA CORPORATION

发明人： Yosuke Sato ,  Akio Ui ,  Hisataka Hayashi

IPC分类号： H01L21/3065 ,  C23C16/50 ,  H01J37/32 ,  H01L21/311

CPC分类号： H01J37/32577 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32706 ,  H01J37/32715 ,  H01L21/3065 ,  H01L21/31116 ,  H01J2237/20214 ,  H01J2237/3341

摘要： A plasma processing apparatus of an embodiment includes a chamber, an introducing part, a substrate electrode, a high-frequency power source, a low-frequency power source, and a switching mechanism. The introducing part introduces a process gas into the chamber. The substrate electrode is disposed in the chamber, a substrate is directly or indirectly mounted on the substrate electrode, and the substrate electrode includes a first and a second electrode elements alternately arranged. The high-frequency power source outputs a high-frequency voltage of 40 MHz or more for ionizing the process gas to generate plasma. The low-frequency power source outputs a low-frequency voltage of 20 MHz or less for introducing ions from the plasma. The switching mechanism applies the low-frequency voltage alternately to the first and the second electrode elements.

公开(公告)号：US12080526B2

公开(公告)日：2024-09-03

申请号：US17625730

申请日：2020-07-09

申请人： JUSUNG ENGINEERING CO., LTD.

发明人： Woong Kyo Oh ,  Young Woon Kim ,  Kwang Su Yoo ,  Do Hyung Kim ,  Yun Gyu Ha

IPC分类号： H01J37/32

CPC分类号： H01J37/32559 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568 ,  H01J2237/332

摘要： The present disclosure relates to a substrate processing apparatus capable of improving efficiency in a substrate processing process by adjusting a flow rate and residence time of gas and a plasma density according to process conditions. The substrate processing apparatus according to the embodiment of the present disclosure is advantageous in that it can enhance efficiency in the substrate processing process by decreasing the flow rate and increasing residence time of gas and the plasma density in the process of supplying the gas through the shape forming of the gas injection module including the first and second injection plates.

公开(公告)号：US12051564B2

公开(公告)日：2024-07-30

申请号：US17299958

申请日：2019-11-26

申请人： Tokyo Electron Limited ,  TOHOKU UNIVERSITY

发明人： Taro Ikeda ,  Satoru Kawakami ,  Masaki Hirayama

IPC分类号： H01J37/32

CPC分类号： H01J37/32091 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32715 ,  H01J2237/2007

摘要： In a shower plate, a plasma processing apparatus, and a plasma processing method, improvement of in-plane uniformity of plasma on a stage is required. The shower plate according to an exemplary embodiment includes an upper dielectric disposed to face a stage and an upper electrode embedded in the upper dielectric. A distance between a bottom surface of the upper dielectric and the upper electrode is shorter in a peripheral portion than in a central portion.

公开(公告)号：US12020942B2

公开(公告)日：2024-06-25

申请号：US17728524

申请日：2022-04-25

申请人： ULVAC, Inc.

发明人： Taichi Suzuki ,  Yasuhiro Morikawa ,  Kenta Doi ,  Toshiyuki Nakamura

IPC分类号： H01L21/3065 ,  B81C1/00 ,  C23C14/02 ,  C23C14/34 ,  H01J37/32 ,  H01L21/308 ,  H01L21/311

CPC分类号： H01L21/30655 ,  B81C1/00531 ,  B81C1/00619 ,  C23C14/021 ,  C23C14/34 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/014 ,  H01J2237/3321 ,  H01J2237/3341 ,  H01J2237/3342

摘要： An etching method of the invention includes: a resist pattern-forming step of forming a resist layer on a target object, the resist layer being formed of a resin, the resist layer having a resist pattern; an etching step of etching the target object via the resist layer having the resist pattern; and a resist protective film-forming step of forming a resist protective film on the resist layer. The etching step is repetitively carried out multiple times. After the etching steps are repetitively carried out multiple times, the resist protective film-forming step is carried out.

公开(公告)号：US12020906B2

公开(公告)日：2024-06-25

申请号：US18079903

申请日：2022-12-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Li-Shi Liu ,  Shih-Tsung Chen

IPC分类号： H01J37/32 ,  G03F1/22 ,  H01L21/67

CPC分类号： H01J37/3244 ,  G03F1/22 ,  H01J37/32541 ,  H01L21/67069 ,  H01L21/6719 ,  H01J2237/334

摘要： A grounding cap module includes a main body, a frame portion, and a cap portion. The main body includes a first opening penetrating the main body and a grounding portion disposed on a periphery of the main body and configured to be electrically grounded. The frame portion is disposed on the main body and includes a second opening aligned with the first opening. The cap portion is disposed on the frame portion and covers the second opening, wherein the first opening, the second opening and the cap portion define a receiving cavity. A gas injection device and an etching apparatus using the same are also provided.

公开(公告)号：US12020902B2

公开(公告)日：2024-06-25

申请号：US17865225

申请日：2022-07-14

申请人： Tokyo Electron Limited

发明人： Jianping Zhao ,  John Carroll ,  Charles Schlechte ,  Peter Lowell George Ventzek

IPC分类号： H01J37/32

CPC分类号： H01J37/32183 ,  H01J37/32128 ,  H01J37/32146 ,  H01J37/32541 ,  H01J37/3299 ,  H01J2237/24564

摘要： A plasma system includes a plasma apparatus including: a plasma chamber; a pedestal configured to hold a substrate in the chamber; and a radio frequency (RF) electrode configured to excite plasma in the chamber; an electromagnetic (EM) circuit block coupled to the RF electrode, the EM circuit block including: a function generator configured to output a broadband RF waveform, the waveform having EM power distributed over a range of frequencies; a broadband amplifier coupled to an output of the function generator, an operating frequency range of the amplifier including the range of frequencies; and a broadband impedance matching network having an input coupled to an output of the broadband amplifier and an output coupled to a terminal of the RF electrode, an operating frequency range of the broadband impedance matching network including the range of frequencies; and a controller configured to adjust an input parameter of the EM circuit block.

公开(公告)号：US20240055237A1

公开(公告)日：2024-02-15

申请号：US18495891

申请日：2023-10-27

申请人： KOKUSAI ELECTRIC CORPORATION

发明人： Tsuyoshi TAKEDA ,  Daisuke Hara

IPC分类号： H01J37/32

CPC分类号： H01J37/32559 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32724 ,  H01J2237/332

摘要： There is provided is a technique that includes: a process chamber in which at least one substrate is processed; and at least one buffer chamber in which plasma is formed, wherein the at least one buffer chamber includes at least two application electrodes of different lengths to which high frequency electric power is applied, and a reference electrode subjected to a reference potential.

公开(公告)号：US20240030009A1

公开(公告)日：2024-01-25

申请号：US18224070

申请日：2023-07-20

申请人： Tokyo Electron Limited

发明人： Kazuhito YAMADA

IPC分类号： H01J37/32 ,  H05B1/02 ,  H05B6/54 ,  H05B6/62

CPC分类号： H01J37/32724 ,  H01J37/32568 ,  H01J37/32541 ,  H05B1/0233 ,  H05B6/54 ,  H05B6/62 ,  H01J2237/2007 ,  H01J2237/24585

摘要： A base disposed in a plasma processing chamber. An electrostatic chuck disposed on an upper portion of the base, the electrostatic chuck including a first part and a second part. A first heater electrode layer group including at least one heater electrode layer disposed in the first part. A second heater electrode layer group including at least one heater electrode layer disposed in the second part. A power source is electrically connected to the first heater electrode layer group and the second heater electrode layer group. A controller configured to periodically and sequentially supply DC current from the power source to heater electrode layers included in the first heater electrode layer group and heater electrode layers included in the second heater electrode layer group.

公开(公告)号：US20240021418A1

公开(公告)日：2024-01-18

申请号：US18352506

申请日：2023-07-14

申请人： PSK INC.

发明人： Kwang Sung YOO ,  Tae Hwan YOUN ,  Hyeon Won JUNG

IPC分类号： H01J37/32

CPC分类号： H01J37/32724 ,  H01J37/32642 ,  H01J37/3244 ,  H01J37/32568 ,  H01J37/32541 ,  H01J2237/334

摘要： The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having a treating space; a support unit configured to support a substate within the treating space; and a plasma source for generating a plasma by exciting a gas supplied to the treating space, and wherein the support unit includes: a chuck having the substrate mounted to a top surface thereof; and a ring member in a ring shape surrounding an outer side of the chuck, and the ring member includes a cut surface which divides the ring member and a holding member positioned at the cut surface which holds a position of the ring member which is divided by the cut surface.