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公开(公告)号：US20180358348A1
公开(公告)日：2018-12-13
申请号：US16047827
申请日：2018-07-27
发明人： Tseng Chin LO , Molly CHANG , Ya-Wen TSENG , Chih-Ting SUN , Zi-Kuan LI , Bo-Sen CHANG , Geng-He LIN
IPC分类号： H01L27/02 , H01L21/66 , H01L21/8234 , H01L21/027 , H01L27/11 , G06F17/50
CPC分类号： H01L27/0207 , G06F17/5072 , H01L21/0274 , H01L21/8234 , H01L22/10 , H01L22/12 , H01L22/14 , H01L22/30 , H01L27/11
摘要： Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.
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公开(公告)号：US20190371783A1
公开(公告)日：2019-12-05
申请号：US16540809
申请日：2019-08-14
发明人： Tseng Chin LO , Molly CHANG , Ya-Wen TSENG , Chih-Ting SUN , Zi-Kuan LI , Bo-Sen CHANG , Geng-He LIN
IPC分类号： H01L27/02 , G06F17/50 , H01L21/027 , H01L21/8234 , H01L27/11 , H01L21/66
摘要： Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.
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公开(公告)号：US20220246600A1
公开(公告)日：2022-08-04
申请号：US17659645
申请日：2022-04-18
发明人： Tseng Chin LO , Molly CHANG , Ya-Wen TSENG , Chih-Ting SUN , Zi-Kuan LI , Bo-Sen CHANG , Geng-He LIN
IPC分类号： H01L27/02 , H01L21/66 , G06F30/392 , H01L21/027 , H01L21/8234 , H01L27/11
摘要： Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.
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公开(公告)号：US20200303366A1
公开(公告)日：2020-09-24
申请号：US16946160
申请日：2020-06-08
发明人： Tseng Chin LO , Molly CHANG , Ya-Wen TSENG , Chih-Ting SUN , Zi-Kuan LI , Bo-Sen CHANG , Geng-He LIN
IPC分类号： H01L27/02 , H01L21/66 , G06F30/392 , H01L21/027 , H01L21/8234 , H01L27/11
摘要： Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.
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公开(公告)号：US20230369309A1
公开(公告)日：2023-11-16
申请号：US18357224
申请日：2023-07-24
发明人： Tseng Chin LO , Molly CHANG , Ya-Wen TSENG , Chih-Ting SUN , Zi-Kuan LI , Bo-Sen CHANG , Geng-He LIN
IPC分类号： H01L27/02 , H01L21/66 , G06F30/392 , H10B10/00 , H01L21/027 , H01L21/8234
CPC分类号： H01L27/0207 , H01L22/30 , G06F30/392 , H10B10/00 , H01L21/0274 , H01L21/8234 , H01L22/12 , H01L22/14 , H01L22/10 , H01L22/34
摘要： Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.
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公开(公告)号：US20180006010A1
公开(公告)日：2018-01-04
申请号：US15484628
申请日：2017-04-11
发明人： Tseng Chin LO , Molly Chang , Ya-Wen TSENG , Chih-Ting SUN , Zi-Kuan LI , Bo-Sen CHANG , Geng-He LIN
IPC分类号： H01L27/02 , H01L21/8234 , G06F17/50 , H01L21/027 , H01L27/11 , H01L21/66
CPC分类号： H01L27/0207 , G06F17/5072 , H01L21/0274 , H01L21/8234 , H01L22/12 , H01L27/11
摘要： Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.
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