公开(公告)号：US11894237B2

公开(公告)日：2024-02-06

申请号：US17826528

申请日：2022-05-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chao-Hsuan Chen ,  Yuan-Sheng Huang

IPC: H01L21/308 ,  H01L21/8234 ,  H01L21/3213

CPC classification number: H01L21/3088 ,  H01L21/3086 ,  H01L21/32139 ,  H01L21/823431 ,  H01L21/823437

Abstract: A method includes forming a polymer layer on a patterned photo resist. The polymer layer extends into an opening in the patterned photo resist. The polymer layer is etched to expose the patterned photo resist. The polymer layer and a top Bottom Anti-Reflective Coating (BARC) are etched to pattern the top BARC, in which the patterned photo resist is used as an etching mask. The top BARC is used as an etching mask to etching an underlying layer.

公开(公告)号：US11348800B2

公开(公告)日：2022-05-31

申请号：US17073847

申请日：2020-10-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chao-Hsuan Chen ,  Yuan-Sheng Huang

IPC: H01L21/308 ,  H01L21/8234 ,  H01L21/3213

Abstract: A method includes forming a polymer layer on a patterned photo resist. The polymer layer extends into an opening in the patterned photo resist. The polymer layer is etched to expose the patterned photo resist. The polymer layer and a top Bottom Anti-Reflective Coating (BARC) are etched to pattern the top BARC, in which the patterned photo resist is used as an etching mask. The top BARC is used as an etching mask to etching an underlying layer.

公开(公告)号：US20210035810A1

公开(公告)日：2021-02-04

申请号：US17073847

申请日：2020-10-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chao-Hsuan Chen ,  Yuan-Sheng Huang

IPC: H01L21/308 ,  H01L21/8234 ,  H01L21/3213

Abstract: A method includes forming a polymer layer on a patterned photo resist. The polymer layer extends into an opening in the patterned photo resist. The polymer layer is etched to expose the patterned photo resist. The polymer layer and a top Bottom Anti-Reflective Coating (BARC) are etched to pattern the top BARC, in which the patterned photo resist is used as an etching mask. The top BARC is used as an etching mask to etching an underlying layer.

公开(公告)号：US20220285165A1

公开(公告)日：2022-09-08

申请号：US17826528

申请日：2022-05-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chao-Hsuan Chen ,  Yuan-Sheng Huang

IPC: H01L21/308 ,  H01L21/8234 ,  H01L21/3213

Abstract: A method includes forming a polymer layer on a patterned photo resist. The polymer layer extends into an opening in the patterned photo resist. The polymer layer is etched to expose the patterned photo resist. The polymer layer and a top Bottom Anti-Reflective Coating (BARC) are etched to pattern the top BARC, in which the patterned photo resist is used as an etching mask. The top BARC is used as an etching mask to etching an underlying layer.