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公开(公告)号：US11894237B2
公开(公告)日：2024-02-06
申请号：US17826528
申请日：2022-05-27
发明人： Chao-Hsuan Chen , Yuan-Sheng Huang
IPC分类号： H01L21/308 , H01L21/8234 , H01L21/3213
CPC分类号： H01L21/3088 , H01L21/3086 , H01L21/32139 , H01L21/823431 , H01L21/823437
摘要： A method includes forming a polymer layer on a patterned photo resist. The polymer layer extends into an opening in the patterned photo resist. The polymer layer is etched to expose the patterned photo resist. The polymer layer and a top Bottom Anti-Reflective Coating (BARC) are etched to pattern the top BARC, in which the patterned photo resist is used as an etching mask. The top BARC is used as an etching mask to etching an underlying layer.
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公开(公告)号：US20210035810A1
公开(公告)日：2021-02-04
申请号：US17073847
申请日：2020-10-19
发明人： Chao-Hsuan Chen , Yuan-Sheng Huang
IPC分类号： H01L21/308 , H01L21/8234 , H01L21/3213
摘要： A method includes forming a polymer layer on a patterned photo resist. The polymer layer extends into an opening in the patterned photo resist. The polymer layer is etched to expose the patterned photo resist. The polymer layer and a top Bottom Anti-Reflective Coating (BARC) are etched to pattern the top BARC, in which the patterned photo resist is used as an etching mask. The top BARC is used as an etching mask to etching an underlying layer.
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公开(公告)号：US09779997B2
公开(公告)日：2017-10-03
申请号：US15068409
申请日：2016-03-11
发明人： Po-Hsueh Li , Chih-Yang Yeh , Chun-Chan Hsiao , Kuan-Lin Yeh , Yuan-Sheng Huang
IPC分类号： H01L27/088 , H01L21/8234 , H01L29/49 , H01L29/423 , H01L29/66
CPC分类号： H01L21/823456 , H01L21/823431 , H01L21/823842 , H01L27/088 , H01L27/0886 , H01L29/42376 , H01L29/4966 , H01L29/66545
摘要： In a method of manufacturing a semiconductor device, a dummy gate structure is formed over a substrate. A first insulating layer is formed over the dummy gate structure. The dummy gate structure is removed so as to form a gate space in the first insulating layer. A first conductive layer is formed in the gate space so as to form a reduced gate space. The reduced gate space is filled with a second conductive layer made of a different material from the first conductive layer. The filled first conductive layer and the second conductive layer are recessed so as to form a first gate recess. A third conductive layer is formed over the first conductive layer and the second conductive layer in the first gate recess. After recessing the filled first conductive layer and the second conductive layer, the second conductive layer protrudes from the first conductive layer.
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公开(公告)号：US10163718B2
公开(公告)日：2018-12-25
申请号：US15699643
申请日：2017-09-08
发明人： Po-Hsueh Li , Chih-Yang Yeh , Chun-Chan Hsiao , Kuan-Lin Yeh , Yuan-Sheng Huang
IPC分类号： H01L21/8234 , H01L29/66 , H01L27/088 , H01L29/423 , H01L29/49 , H01L21/8238
摘要： In a method of manufacturing a semiconductor device, a dummy gate structure is formed over a substrate. A first insulating layer is formed over the dummy gate structure. The dummy gate structure is removed so as to form a gate space in the first insulating layer. A first conductive layer is formed in the gate space so as to form a reduced gate space. The reduced gate space is filled with a second conductive layer made of a different material from the first conductive layer. The filled first conductive layer and the second conductive layer are recessed so as to form a first gate recess. A third conductive layer is formed over the first conductive layer and the second conductive layer in the first gate recess. After recessing the filled first conductive layer and the second conductive layer, the second conductive layer protrudes from the first conductive layer.
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公开(公告)号：US11670695B2
公开(公告)日：2023-06-06
申请号：US17232644
申请日：2021-04-16
IPC分类号： H01L29/417 , H01L29/66 , H01L21/3065 , H01L27/088 , H01L21/8234 , H01L29/78
CPC分类号： H01L29/41791 , H01L21/3065 , H01L21/823431 , H01L27/0886 , H01L29/66795 , H01L29/785
摘要： A method of applying and then removing a protective layer over a portion of a gate stack is provided. The protective layer is deposited and then a plasma precursor is separated into components. Neutral radicals are then utilized in order to remove the protective layer. In some embodiments the removal also forms a protective by-product which helps to protect underlying layers from damage during the etching process.
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公开(公告)号：US20220357603A1
公开(公告)日：2022-11-10
申请号：US17391285
申请日：2021-08-02
发明人： Yuan-Sheng Huang
摘要： Various embodiments of the present disclosure are directed towards a semiconductor structure comprising a waveguide. The waveguide has an input region and an output region. The input region is configured to receive light. The waveguide comprises a lower doped structure comprising a first doping type and a plurality of doped pillar structures disposed within the lower doped structure. The doped pillar structures comprise a second doping type opposite the first doping type. The doped pillar structures extend from a top surface of the lower doped structure to a point below the top surface of the lower doped structure.
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公开(公告)号：US11348800B2
公开(公告)日：2022-05-31
申请号：US17073847
申请日：2020-10-19
发明人： Chao-Hsuan Chen , Yuan-Sheng Huang
IPC分类号： H01L21/308 , H01L21/8234 , H01L21/3213
摘要： A method includes forming a polymer layer on a patterned photo resist. The polymer layer extends into an opening in the patterned photo resist. The polymer layer is etched to expose the patterned photo resist. The polymer layer and a top Bottom Anti-Reflective Coating (BARC) are etched to pattern the top BARC, in which the patterned photo resist is used as an etching mask. The top BARC is used as an etching mask to etching an underlying layer.
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公开(公告)号：US20210234013A1
公开(公告)日：2021-07-29
申请号：US17232644
申请日：2021-04-16
IPC分类号： H01L29/417 , H01L29/66 , H01L21/3065 , H01L27/088 , H01L21/8234 , H01L29/78
摘要： A method of applying and then removing a protective layer over a portion of a gate stack is provided. The protective layer is deposited and then a plasma precursor is separated into components. Neutral radicals are then utilized in order to remove the protective layer. In some embodiments the removal also forms a protective by-product which helps to protect underlying layers from damage during the etching process.
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公开(公告)号：US20230268404A1
公开(公告)日：2023-08-24
申请号：US18309564
申请日：2023-04-28
IPC分类号： H01L29/417 , H01L29/66 , H01L21/3065 , H01L27/088 , H01L21/8234 , H01L29/78
CPC分类号： H01L29/41791 , H01L29/66795 , H01L21/3065 , H01L27/0886 , H01L21/823431 , H01L29/785
摘要： A method of applying and then removing a protective layer over a portion of a gate stack is provided. The protective layer is deposited and then a plasma precursor is separated into components. Neutral radicals are then utilized in order to remove the protective layer. In some embodiments the removal also forms a protective by-product which helps to protect underlying layers from damage during the etching process.
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公开(公告)号：US11545543B2
公开(公告)日：2023-01-03
申请号：US17140374
申请日：2021-01-04
发明人： Yuan-Sheng Huang , Yi-Chen Chen
摘要： Various embodiments of the present disclosure are directed towards a trench capacitor with a trench pattern for yield improvement. The trench capacitor is on a substrate and comprises a plurality of capacitor segments. The capacitor segments extend into the substrate according to the trench pattern and are spaced with a pitch on an axis. The plurality of capacitor segments comprises an edge capacitor segment at an edge of the trench capacitor and a center capacitor segment at a center of the trench capacitor. The edge capacitor segment has a greater width than the center capacitor segment and/or the pitch is greater at the edge capacitor segment than at the center capacitor segment. The greater width may facilitate stress absorption and the greater pitch may increase substrate rigidity at the edge of the trench capacitor where thermal expansion stress is greatest, thereby reducing substrate bending and trench burnout for yield improvements.
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