公开(公告)号：US11906898B2

公开(公告)日：2024-02-20

申请号：US16989744

申请日：2020-08-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chun-Chieh Tien ,  Cheng-Hsuen Chiang ,  Chih-Ming Chen ,  Cheng-Ming Lin ,  Yen-Wei Huang ,  Hao-Ming Chang ,  Kuo-Chin Lin ,  Kuan-Shien Lee

IPC: G03F1/32 ,  G03F1/38 ,  H01L21/308 ,  G03F1/80

CPC classification number: G03F1/32 ,  G03F1/38 ,  G03F1/80 ,  H01L21/3083

Abstract: In a method of manufacturing a photo mask, a resist layer is formed over a mask blank, which includes a mask substrate, a phase shift layer disposed on the mask substrate and a light blocking layer disposed on the phase shift layer. A resist pattern is formed by using a lithographic operation. The light blocking layer is patterned by using the resist pattern as an etching mask. The phase shift layer is patterned by using the patterned light blocking layer as an etching mask. A border region of the mask substrate is covered with an etching hard cover, while a pattern region of the mask substrate is opened. The patterned light blocking layer in the pattern region is patterned through the opening of the etching hard cover. A photo-etching operation is performed on the pattern region to remove residues of the light blocking layer.

公开(公告)号：US10739671B2

公开(公告)日：2020-08-11

申请号：US15905543

申请日：2018-02-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chun-Chieh Tien ,  Cheng-Hsuen Chiang ,  Chih-Ming Chen ,  Cheng-Ming Lin ,  Yen-Wei Huang ,  Hao-Ming Chang ,  Kuo Chin Lin ,  Kuan-Shien Lee

IPC: G03F1/32 ,  G03F1/38

Abstract: In a method of manufacturing a photo mask, a resist layer is formed over a mask blank, which includes a mask substrate, a phase shift layer disposed on the mask substrate and a light blocking layer disposed on the phase shift layer. A resist pattern is formed by using a lithographic operation. The light blocking layer is patterned by using the resist pattern as an etching mask. The phase shift layer is patterned by using the patterned light blocking layer as an etching mask. A border region of the mask substrate is covered with an etching hard cover, while a pattern region of the mask substrate is opened. The patterned light blocking layer in the pattern region is patterned through the opening of the etching hard cover. A photo-etching operation is performed on the pattern region to remove residues of the light blocking layer.

公开(公告)号：US10908494B2

公开(公告)日：2021-02-02

申请号：US15687541

申请日：2017-08-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Ming Lin ,  Cheng-Hsuen Chiang ,  Chih-Ming Chen ,  Huai-Chih Cheng ,  Hao-Ming Chang ,  Hsao Shih ,  Hsin-Yi Yin

IPC: G03F1/26 ,  G03F1/68 ,  G03F1/76 ,  G03F1/82 ,  G03F7/20

Abstract: A method of manufacturing a photomask includes at least the following steps. First, a phase shift layer and a hard mask layer are formed on a light transmitting substrate. A predetermined mask pattern is split into a first pattern and a second pattern. A series of processes is performed so that the hard mask layer and the phase shift layer have the first pattern and the second pattern. The series of processes includes at least the following steps. First, a first exposure process for transferring the first pattern is performed. Thereafter, a second exposure process for transferring the second pattern is performed. The first exposure process and the second exposure process are executed by different machines.

公开(公告)号：US20180348625A1

公开(公告)日：2018-12-06

申请号：US15687541

申请日：2017-08-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Ming Lin ,  Cheng-Hsuen Chiang ,  Chih-Ming Chen ,  Huai-Chih Cheng ,  Hao-Ming Chang ,  Hsao Shih ,  Hsin-Yi Yin

IPC: G03F1/26

Abstract: A method of manufacturing a photomask includes at least the following steps. First, a phase shift layer and a hard mask layer are formed on a light transmitting substrate. A predetermined mask pattern is split into a first pattern and a second pattern. A series of processes is performed so that the hard mask layer and the phase shift layer have the first pattern and the second pattern. The series of processes includes at least the following steps. First, a first exposure process for transferring the first pattern is performed. Thereafter, a second exposure process for transferring the second pattern is performed. The first exposure process and the second exposure process are executed by different machines.