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公开(公告)号：US10908494B2
公开(公告)日：2021-02-02
申请号：US15687541
申请日：2017-08-27
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Cheng-Ming Lin , Cheng-Hsuen Chiang , Chih-Ming Chen , Huai-Chih Cheng , Hao-Ming Chang , Hsao Shih , Hsin-Yi Yin
Abstract: A method of manufacturing a photomask includes at least the following steps. First, a phase shift layer and a hard mask layer are formed on a light transmitting substrate. A predetermined mask pattern is split into a first pattern and a second pattern. A series of processes is performed so that the hard mask layer and the phase shift layer have the first pattern and the second pattern. The series of processes includes at least the following steps. First, a first exposure process for transferring the first pattern is performed. Thereafter, a second exposure process for transferring the second pattern is performed. The first exposure process and the second exposure process are executed by different machines.
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公开(公告)号：US20180348625A1
公开(公告)日：2018-12-06
申请号：US15687541
申请日：2017-08-27
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Cheng-Ming Lin , Cheng-Hsuen Chiang , Chih-Ming Chen , Huai-Chih Cheng , Hao-Ming Chang , Hsao Shih , Hsin-Yi Yin
IPC: G03F1/26
Abstract: A method of manufacturing a photomask includes at least the following steps. First, a phase shift layer and a hard mask layer are formed on a light transmitting substrate. A predetermined mask pattern is split into a first pattern and a second pattern. A series of processes is performed so that the hard mask layer and the phase shift layer have the first pattern and the second pattern. The series of processes includes at least the following steps. First, a first exposure process for transferring the first pattern is performed. Thereafter, a second exposure process for transferring the second pattern is performed. The first exposure process and the second exposure process are executed by different machines.
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