公开(公告)号：US11532516B2

公开(公告)日：2022-12-20

申请号：US17227831

申请日：2021-04-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Su-Hao Liu ,  Wen-Yen Chen ,  Tz-Shian Chen ,  Cheng-Jung Sung ,  Li-Ting Wang ,  Liang-Yin Chen ,  Huicheng Chang ,  Yee-Chia Yeo ,  Syun-Ming Jang

IPC: H01L21/768 ,  H01L21/02 ,  H01L29/78 ,  H01L29/66 ,  H01L29/08

Abstract: A method includes forming a gate stack over a first semiconductor region, removing a second portion of the first semiconductor region on a side of the gate stack to form a recess, growing a second semiconductor region starting from the recess, implanting the second semiconductor region with an impurity, and performing a melting laser anneal on the second semiconductor region. A first portion of the second semiconductor region is molten during the melting laser anneal, and a second and a third portion of the second semiconductor region on opposite sides of the first portion are un-molten.

公开(公告)号：US20210257255A1

公开(公告)日：2021-08-19

申请号：US17227831

申请日：2021-04-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Su-Hao Liu ,  Wen-Yen Chen ,  Tz-Shian Chen ,  Cheng-Jung Sung ,  Li-Ting Wang ,  Liang-Yin Chen ,  Huicheng Chang ,  Yee-Chia Yeo ,  Syun-Ming Jang

IPC: H01L21/768 ,  H01L21/02 ,  H01L29/78 ,  H01L29/66 ,  H01L29/08

Abstract: A method includes forming a gate stack over a first semiconductor region, removing a second portion of the first semiconductor region on a side of the gate stack to form a recess, growing a second semiconductor region starting from the recess, implanting the second semiconductor region with an impurity, and performing a melting laser anneal on the second semiconductor region. A first portion of the second semiconductor region is molten during the melting laser anneal, and a second and a third portion of the second semiconductor region on opposite sides of the first portion are un-molten.