公开(公告)号：US20240387274A1

公开(公告)日：2024-11-21

申请号：US18786886

申请日：2024-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Szu-Chi Yang ,  Allen Chien ,  Tsai-Yu Huang ,  Chien-Chih Lin ,  Po-Kai Hsiao ,  Shih-Hao Lin ,  Chien-Chih Lee ,  Chih Chieh Yeh ,  Cheng-Ting Ding ,  Tsung-Hung Lee

IPC: H01L21/8234 ,  H01L29/06 ,  H01L29/10

Abstract: A method according to the present disclosure includes providing a workpiece including a first fin-shaped structure and a second fin-shaped structure over a substrate, depositing a nitride liner over the substrate and sidewalls of the first fin-shaped structure and the second fin-shaped structure, forming an isolation feature over the nitride liner and between the first fin-shaped structure and the second fin-shaped structure, epitaxially growing a cap layer on exposed surfaces of the first fin-shaped structure and the second fin-shaped structure and above the nitride liner, crystalizing the cap layer, and forming a first source/drain feature over a first source/drain region of the first fin-shaped structure and a second source/drain feature over a second source/drain region of the second fin-shaped structure.

公开(公告)号：US20230326802A1

公开(公告)日：2023-10-12

申请号：US18329396

申请日：2023-06-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Szu-Chi Yang ,  Allen Chien ,  Tsai-Yu Huang ,  Chien-Chih Lin ,  Po-Kai Hsiao ,  Shih-Hao Lin ,  Chien-Chih Lee ,  Chih Chieh Yeh ,  Cheng-Ting Ding ,  Tsung-Hung Lee

IPC: H01L21/8234 ,  H01L29/06 ,  H01L29/10

CPC classification number: H01L21/823431 ,  H01L29/0607 ,  H01L21/823418 ,  H01L21/823412 ,  H01L29/1054

Abstract: The present disclosure provides methods of fabricating a semiconductor device. A method according to one embodiment includes forming, on a substrate, a first fin formed of a first semiconductor material and a second fin formed of a second semiconductor material different from the first semiconductor material, forming a semiconductor cap layer over the first fin and the second fin, and annealing the semiconductor cap layer at a first temperature while at least a portion of the semiconductor cap layer is exposed.

公开(公告)号：US11670551B2

公开(公告)日：2023-06-06

申请号：US16926528

申请日：2020-07-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Szu-Chi Yang ,  Allen Chien ,  Cheng-Ting Ding ,  Chien-Chih Lin ,  Chien-Chih Lee ,  Shih-Hao Lin ,  Tsung-Hung Lee ,  Chih Chieh Yeh ,  Po-Kai Hsiao ,  Tsai-Yu Huang

IPC: H01L21/8234 ,  H01L21/324 ,  H01L29/78 ,  H01L29/06 ,  H01L29/10

CPC classification number: H01L21/823431 ,  H01L21/823412 ,  H01L21/823418 ,  H01L29/0607 ,  H01L29/1054

Abstract: The present disclosure provides methods of fabricating a semiconductor device. A method according to one embodiment includes forming, on a substrate, a first fin formed of a first semiconductor material and a second fin formed of a second semiconductor material different from the first semiconductor material, forming a semiconductor cap layer over the first fin and the second fin, and annealing the semiconductor cap layer at a first temperature while at least a portion of the semiconductor cap layer is exposed.

公开(公告)号：US20210098305A1

公开(公告)日：2021-04-01

申请号：US16926528

申请日：2020-07-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Szu-Chi Yang ,  Allen Chien ,  Cheng-Ting Ding ,  Chien-Chih Lin ,  Chien-Chih Lee ,  Shih-Hao Lin ,  Tsung-Hung Lee ,  Chih Chieh Yeh ,  Po-Kai Hsiao ,  Tsai-Yu Huang

IPC: H01L21/8234 ,  H01L29/06 ,  H01L29/10

Abstract: The present disclosure provides methods of fabricating a semiconductor device. A method according to one embodiment includes forming, on a substrate, a first fin formed of a first semiconductor material and a second fin formed of a second semiconductor material different from the first semiconductor material, forming a semiconductor cap layer over the first fin and the second fin, and annealing the semiconductor cap layer at a first temperature while at least a portion of the semiconductor cap layer is exposed.