公开(公告)号：US11101354B2

公开(公告)日：2021-08-24

申请号：US16983369

申请日：2020-08-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Gulbagh Singh ,  Cheng-Yeh Huang ,  Chin-Nan Chang ,  Chih-Ming Lee ,  Chi-Yen Lin

IPC: H01L29/40 ,  H01L21/762 ,  H01L21/768 ,  H01L21/324 ,  H01L29/45 ,  H01L21/265

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a semiconductor substrate. The method includes forming an isolation structure in the semiconductor substrate. The isolation structure surrounds a first active region of the semiconductor substrate. The method includes forming a semiconductor strip structure over the semiconductor substrate. The semiconductor strip structure extends across the first active region and extends over the isolation structure, the semiconductor strip structure has a first doped region and a spacing region connected to the first doped region, the first doped region extends across the first active region, the spacing region is over the isolation structure, and the spacing region is an undoped region. The method includes performing an implantation process over the spacing region. The method includes forming a metal silicide layer over the semiconductor strip structure to continuously cover the first doped region and the spacing region.

公开(公告)号：US10734489B2

公开(公告)日：2020-08-04

申请号：US16179165

申请日：2018-11-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Gulbagh Singh ,  Cheng-Yeh Huang ,  Chin-Nan Chang ,  Chih-Ming Lee ,  Chi-Yen Lin

IPC: H01L29/40 ,  H01L21/762 ,  H01L21/768 ,  H01L21/324 ,  H01L29/45 ,  H01L21/265

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a semiconductor substrate. The method includes forming an isolation structure in the semiconductor substrate. The isolation structure surrounds a first active region and a second active region of the semiconductor substrate. The method includes forming a semiconductor strip structure over the semiconductor substrate. The semiconductor strip structure extends across the first active region, the second active region, and the isolation structure between the first active region and the second active region, the semiconductor strip structure has a P-type doped region, an N-type doped region, and a spacing region. The method includes performing an implantation process over the spacing region. The method includes forming a metal silicide layer over the semiconductor strip structure to cover the P-type doped region, the N-type doped region, and the spacing region.