公开(公告)号：US20240304687A1

公开(公告)日：2024-09-12

申请号：US18232986

申请日：2023-08-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien Ning Yao ,  Chia-Hao Chang ,  Shih-Cheng Chen ,  Chih-Hao Wang ,  Chia-Cheng Tsai ,  Kuo-Cheng Chiang ,  Zhi-Chang Lin ,  Jung-Hung Chang ,  Tsung-Han Chuang

IPC: H01L29/417 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L29/41775 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66553 ,  H01L29/6656 ,  H01L29/775

Abstract: A semiconductor device and a method of fabricating the semiconductor device are disclosed. The method includes forming a polysilicon structure on a substrate, depositing a first spacer layer on the polysilicon structure, depositing a second spacer layer on the first spacer layer, forming a S/D region on the substrate, removing the second spacer layer, depositing a third spacer layer on the first spacer layer and on the S/D region, depositing an ESL on the third spacer layer, depositing an ILD layer on the etch stop layer, and replacing the polysilicon structure with a gate structure surrounding the nanostructured layer.