公开(公告)号：US20250113517A1

公开(公告)日：2025-04-03

申请号：US18477648

申请日：2023-09-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shao-An WANG ,  Ding-Kang SHIH ,  Chia-Ling PAI ,  Pinyen LIN

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: A method of forming source/drain regions of semiconductor devices is disclosed. The method includes forming a fin structure on a substrate, forming a polysilicon structure on the fin structure, removing a portion of the fin structure adjacent to the polysilicon structure to form an opening, and forming a S/D region in the opening. The forming the S/D region includes exposing the fin structure in the opening to a first flow rate of a precursor gas during a first phase of a gas flow cycle, a second flow rate of the precursor gas during a second phase of the gas flow cycle. The exposing the fin structure in the opening to the precursor gas, the etching gas, and the plasma is performed in an in-situ process.