公开(公告)号：US20210272818A1

公开(公告)日：2021-09-02

申请号：US17323951

申请日：2021-05-18

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yi-Sheng LIN ,  Chi-Jen LIU ,  Chi-Hsiang SHEN ,  Te-Ming KUNG ,  Chun-Wei HSU ,  Chia-Wei HO ,  Yang-Chun CHENG ,  William Weilun HONG ,  Liang-Guang CHEN ,  Kei-Wei CHEN

IPC分类号： H01L21/321 ,  H01L23/535 ,  H01L23/528 ,  H01L23/532 ,  H01L21/768

摘要： The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.