公开(公告)号：US20210082830A1

公开(公告)日：2021-03-18

申请号：US16572609

申请日：2019-09-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Ming Lee ,  Chiang-Hao Lee ,  Hung-Jui Kuo ,  Ming-Che Ho

IPC: H01L23/532 ,  H01L23/00 ,  H01L21/768 ,  H01L21/56 ,  H01L23/528 ,  H01L23/31 ,  H01L21/02 ,  H01L23/522

Abstract: A package structure includes a semiconductor die and a redistribution circuit structure. The redistribution circuit structure is disposed on and electrically connected to the semiconductor die and includes a metallization layer and a dielectric layer disposed on the metallization layer. The metallization layer has conductive patterns, where each of the conductive patterns includes crystal grains, the crystal grains each are in a column shape and include a plurality of first banded structures having copper atoms oriented on a (220) lattice plane.

公开(公告)号：US10957645B1

公开(公告)日：2021-03-23

申请号：US16572609

申请日：2019-09-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Ming Lee ,  Chiang-Hao Lee ,  Hung-Jui Kuo ,  Ming-Che Ho

IPC: H01L23/48 ,  H01L21/4763 ,  H01L23/532 ,  H01L23/00 ,  H01L21/768 ,  H01L21/56 ,  H01L23/31 ,  H01L21/02 ,  H01L23/522 ,  H01L23/528

Abstract: A package structure includes a semiconductor die and a redistribution circuit structure. The redistribution circuit structure is disposed on and electrically connected to the semiconductor die and includes a metallization layer and a dielectric layer disposed on the metallization layer. The metallization layer has conductive patterns, where each of the conductive patterns includes crystal grains, the crystal grains each are in a column shape and include a plurality of first banded structures having copper atoms oriented on a (220) lattice plane.