公开(公告)号：US20250130490A1

公开(公告)日：2025-04-24

申请号：US18611138

申请日：2024-03-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ying-Hui HSIEH ,  Boming HSU ,  Hsiang-Chien HSU ,  Chien-Hung LAI

IPC: G03F1/72 ,  C07F15/00 ,  C23C16/48 ,  G03F1/24 ,  G03F1/54

Abstract: A method for repairing a lithography mask is provided. The method includes receiving a lithography mask having a capping layer that includes a damaged region, identifying a location and a dimension of the damaged region of the capping layer, determining a repairing time duration based on the dimension of the damaged region of the capping layer, and forming a capping patch layer in the damaged region of the capping layer.