公开(公告)号：US20190096831A1

公开(公告)日：2019-03-28

申请号：US16003486

申请日：2018-06-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ya-Ping Su ,  Han-Wen Fung ,  Chia-Chi Chung ,  Chih-Hsien Hsu ,  Chun Yan Chen ,  Chien-Sheng Wu ,  Tien-Chih Huang ,  Wei-Da Chen ,  Chien-Hua Tseng

IPC: H01L23/00 ,  H01L21/311

Abstract: A method for making a semiconductor device is disclosed. A substrate comprising semiconductor device elements is provided. A top conductive pad and an anti-reflective coating are patterned over the substrate. The anti-reflective coating is disposed on the top conductive pad. At least one passivation film is formed over the substrate and the anti-reflective coating. The at least one passivation film and the anti-reflective coating are etched to form a trench therein so as to expose a portion of the top conductive pad.

公开(公告)号：US10964653B2

公开(公告)日：2021-03-30

申请号：US16003486

申请日：2018-06-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ya-Ping Su ,  Han-Wen Fung ,  Chia-Chi Chung ,  Chih-Hsien Hsu ,  Chun Yan Chen ,  Chien-Sheng Wu ,  Tien-Chih Huang ,  Wei-Da Chen ,  Chien-Hua Tseng

IPC: H01L23/00 ,  H01L21/311 ,  H01L21/768 ,  H01L23/522

Abstract: A method for making a semiconductor device is disclosed. A substrate comprising semiconductor device elements is provided. A top conductive pad and an anti-reflective coating are patterned over the substrate. The anti-reflective coating is disposed on the top conductive pad. At least one passivation film is formed over the substrate and the anti-reflective coating. The at least one passivation film and the anti-reflective coating are etched to form a trench therein so as to expose a portion of the top conductive pad.