公开(公告)号：US10964653B2

公开(公告)日：2021-03-30

申请号：US16003486

申请日：2018-06-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ya-Ping Su ,  Han-Wen Fung ,  Chia-Chi Chung ,  Chih-Hsien Hsu ,  Chun Yan Chen ,  Chien-Sheng Wu ,  Tien-Chih Huang ,  Wei-Da Chen ,  Chien-Hua Tseng

IPC: H01L23/00 ,  H01L21/311 ,  H01L21/768 ,  H01L23/522

Abstract: A method for making a semiconductor device is disclosed. A substrate comprising semiconductor device elements is provided. A top conductive pad and an anti-reflective coating are patterned over the substrate. The anti-reflective coating is disposed on the top conductive pad. At least one passivation film is formed over the substrate and the anti-reflective coating. The at least one passivation film and the anti-reflective coating are etched to form a trench therein so as to expose a portion of the top conductive pad.

公开(公告)号：US20190096831A1

公开(公告)日：2019-03-28

申请号：US16003486

申请日：2018-06-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ya-Ping Su ,  Han-Wen Fung ,  Chia-Chi Chung ,  Chih-Hsien Hsu ,  Chun Yan Chen ,  Chien-Sheng Wu ,  Tien-Chih Huang ,  Wei-Da Chen ,  Chien-Hua Tseng

IPC: H01L23/00 ,  H01L21/311

Abstract: A method for making a semiconductor device is disclosed. A substrate comprising semiconductor device elements is provided. A top conductive pad and an anti-reflective coating are patterned over the substrate. The anti-reflective coating is disposed on the top conductive pad. At least one passivation film is formed over the substrate and the anti-reflective coating. The at least one passivation film and the anti-reflective coating are etched to form a trench therein so as to expose a portion of the top conductive pad.

公开(公告)号：US11769652B2

公开(公告)日：2023-09-26

申请号：US16525330

申请日：2019-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jr-Sheng Chen ,  An-Chi Li ,  Shih-Che Huang ,  Chih-Hsien Hsu ,  Zhi-Hao Huang ,  Ming Chih Wang ,  Yu-Pei Chiang ,  Chun Yan Chen

IPC: H01J37/32 ,  H01L21/67 ,  G06F30/00

CPC classification number: H01J37/32449 ,  G06F30/00 ,  H01J37/3211 ,  H01J2237/3341 ,  H01J2237/3343 ,  H01L21/67069

Abstract: Devices and methods for controlling wafer uniformity in plasma-based process is disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a gas distribution plate (GDP) arranged in the process chamber. The housing comprises: a gas inlet configured to receive a process gas, and a gas outlet configured to expel processed gas. The GDP is configured to distribute the process gas within the process chamber. The GDP has a plurality of holes evenly distributed thereon. The GDP comprises a first zone and a second zone. The first zone is closer to the gas outlet than the second zone. At least one hole in the first zone is closed.

公开(公告)号：US20220359168A1

公开(公告)日：2022-11-10

申请号：US17874161

申请日：2022-07-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jr-Sheng CHEN ,  An-Chi LI ,  Shih-Che HUANG ,  Chih-Hsien HSU ,  Zhi-Hao HUANG ,  Alex WANG ,  Yu-Pei CHIANG ,  Chun Yan Chen

IPC: H01J37/32 ,  H01L21/67

Abstract: Devices and methods for controlling wafer uniformity using a gas baffle plate are disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a baffle plate arranged above a wafer in the process chamber. The baffle plate is configured to control plasma distribution on the wafer. The baffle plate has a shape of an annulus that comprises a first annulus sector and a second annulus sector. The first annulus sector has a first inner radius. The second annulus sector has a second inner radius that is different from the first inner radius.

公开(公告)号：US11615946B2

公开(公告)日：2023-03-28

申请号：US16422071

申请日：2019-05-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jr-Sheng Chen ,  An-Chi Li ,  Shih-Che Huang ,  Chih-Hsien Hsu ,  Zhi-Hao Huang ,  Alex Wang ,  Yu-Pei Chiang ,  Chun Yan Chen

IPC: C23C16/00 ,  H01L21/306 ,  H01J37/32 ,  H01L21/67 ,  H01L21/768

Abstract: Devices and methods for controlling wafer uniformity using a gas baffle plate are disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a baffle plate arranged above a wafer in the process chamber. The baffle plate is configured to control plasma distribution on the wafer. The baffle plate has a shape of an annulus that comprises a first annulus sector and a second annulus sector. The first annulus sector has a first inner radius. The second annulus sector has a second inner radius that is different from the first inner radius.