THIN FILM METROLOGY
    1.
    发明申请

    公开(公告)号:US20220316861A1

    公开(公告)日:2022-10-06

    申请号:US17846910

    申请日:2022-06-22

    IPC分类号: G01B11/06 G01Q60/24

    摘要: A method of evaluating a thickness of a film on a substrate includes detecting atomic force responses of the film to exposure of electromagnetic radiation in the infrared portion of the electromagnetic spectrum. The use of atomic force microscopy to evaluate thicknesses of thin films avoids underlayer noise commonly encountered when optical metrology techniques are utilized to evaluate film thicknesses. Such underlayer noise adversely impacts the accuracy of the thickness evaluation.

    THIN FILM METROLOGY
    3.
    发明申请

    公开(公告)号:US20210364275A1

    公开(公告)日:2021-11-25

    申请号:US17194934

    申请日:2021-03-08

    IPC分类号: G01B11/06 G01Q60/24

    摘要: A method of evaluating a thickness of a film on a substrate includes detecting atomic force responses of the film to exposure of electromagnetic radiation in the infrared portion of the electromagnetic spectrum. The use of atomic force microscopy to evaluate thicknesses of thin films avoids underlayer noise commonly encountered when optical metrology techniques are utilized to evaluate film thicknesses. Such underlayer noise adversely impacts the accuracy of the thickness evaluation.