公开(公告)号：US20150102456A1

公开(公告)日：2015-04-16

申请号：US14052687

申请日：2013-10-11

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Kuo-Min LIN ,  Wei-Lun HONG ,  Ying-Tsung CHEN ,  Liang-Guang CHEN

IPC分类号： H01L29/06 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/762

CPC分类号： H01L21/31055 ,  H01L21/02236 ,  H01L21/31053 ,  H01L21/76224

摘要： A semiconductor device includes a semiconductor substrate and a trench isolation. The trench isolation is located in the semiconductor substrate, and includes a first cushion layer, a second cushion layer and an insulating filler. The first cushion layer is peripherally enclosed by the semiconductor substrate, the second cushion layer is peripherally enclosed by the first cushion layer, and insulating filler is peripherally enclosed by the second cushion layer. A method for fabricating the semiconductor device is also provided herein.

摘要翻译： 半导体器件包括半导体衬底和沟槽隔离。 沟槽隔离位于半导体衬底中，并且包括第一缓冲层，第二缓冲层和绝缘填料。 第一缓冲层由半导体衬底周边封闭，第二缓冲层由第一缓冲层周边封闭，绝缘填料由第二缓冲层周边封闭。 本文还提供了一种用于制造半导体器件的方法。

公开(公告)号：US20220415665A1

公开(公告)日：2022-12-29

申请号：US17355981

申请日：2021-06-23

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Te-Chien HOU ,  Po-Chin NIEN ,  Chih Hung CHEN ,  Ying-Tsung CHEN ,  Kei-Wei CHEN

IPC分类号： H01L21/306 ,  B24B53/017 ,  B24B37/34

摘要： A chemical mechanical planarization system includes a chemical mechanical planarization pad that rotates during a chemical mechanical planarization process. A chemical mechanical planarization head places a semiconductor wafer in contact with the chemical mechanical planarization pad during the process. A slurry supply system supplies a slurry onto the pad during the process. A pad conditioner conditions the pad during the process. An impurity removal system removes debris and impurities from the slurry.

公开(公告)号：US20140370696A1

公开(公告)日：2014-12-18

申请号：US13916827

申请日：2013-06-13

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Che-Hao TU ,  Chih-Yu CHANG ,  William Weilun HONG ,  Ying-Tsung CHEN

IPC分类号： H01L21/28 ,  H01L21/67 ,  H01L21/321 ,  H01L21/306

CPC分类号： H01L21/3212 ,  H01L21/02065 ,  H01L21/02074 ,  H01L21/31053 ,  H01L21/32105 ,  H01L29/66545

摘要： Embodiments of cleaning a surface of a polysilicon layer during a chemical mechanical polishing (CMP) process are provided. The method includes providing a substrate, and forming a gate structure on the substrate, and the gate structure includes a polysilicon layer. The method further includes forming an inter-layer dielectric layer (ILD) over the gate structure. The method also includes performing a CMP process to planarize the inter-layer dielectric layer (ILD) and to expose the polysilicon layer, and the CMP process includes: providing an oxidation solution to a surface of the substrate to perform an oxidation operation to form an oxide layer on the polysilicon layer; and providing a cleaning solution to the surface of the substrate to perform a cleaning operation.

摘要翻译： 提供了在化学机械抛光（CMP）工艺期间清洁多晶硅层的表面的实施例。 该方法包括提供衬底，并在衬底上形成栅极结构，并且栅极结构包括多晶硅层。 该方法还包括在栅极结构上形成层间电介质层（ILD）。 该方法还包括执行CMP工艺以平坦化层间电介质层（ILD）并暴露多晶硅层，并且CMP工艺包括：向衬底的表面提供氧化溶液以进行氧化操作以形成 多晶硅层上的氧化物层; 以及向所述基板的表面提供清洁溶液以执行清洁操作。