公开(公告)号：US20200075448A1

公开(公告)日：2020-03-05

申请号：US16432625

申请日：2019-06-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Cheng CHEN ,  Wei-Li HUANG ,  Chun-Yi WU ,  Kuang-Yi WU ,  Hon-Lin HUANG ,  Chih-Hung SU ,  Chin-Yu KU ,  Chen-Shien CHEN

IPC: H01L23/31 ,  H01L21/768 ,  H01L23/532 ,  H01L23/00

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a passivation layer over a semiconductor substrate. The method also includes forming a magnetic element over the passivation layer. The method further includes forming an isolation layer over the magnetic element and the passivation layer. The isolation layer includes a polymer material. In addition, the method includes forming a conductive line over the isolation layer, and the conductive line extends across the magnetic element.