公开(公告)号：US20200350395A1

公开(公告)日：2020-11-05

申请号：US16933062

申请日：2020-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Cheng CHEN ,  Wei-Li HUANG ,  Chien-Chih KUO ,  Hon-Lin HUANG ,  Chin-Yu KU ,  Chen-Shien CHEN

IPC: H01L49/02 ,  H01F41/04 ,  H01L23/00 ,  H01L21/768 ,  H01L23/31 ,  H01L23/532

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The magnetic element has a first edge. The semiconductor device structure also includes an adhesive element between the magnetic element and the semiconductor substrate, and the adhesive element has a second edge. The semiconductor device structure further includes an isolation element extending across the magnetic element. The isolation element partially covers a top surface of the magnetic element and partially covers sidewall surfaces of the magnetic element. The isolation element has a third edge, and the second edge is closer to the third edge than the first edge. In addition, the semiconductor device structure includes a conductive line over the isolation element.

公开(公告)号：US20200006465A1

公开(公告)日：2020-01-02

申请号：US16260439

申请日：2019-01-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Yu KU ,  Chi-Cheng CHEN ,  Hon-Lin HUANG ,  Wei-Li HUANG ,  Chun-Yi WU ,  Chen-Shien CHEN

IPC: H01L49/02

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming an etch stop layer over a semiconductor substrate and forming a magnetic element over the etch stop layer. The method also includes forming an isolation element extending across the magnetic element. The isolation element partially covers the top surface of the magnetic element and partially covers sidewall surfaces of the magnetic element. The method further includes forming a conductive line over the isolation element. In addition, the method includes forming a dielectric layer over the conductive line, the isolation element, and the magnetic element.

公开(公告)号：US20200321431A1

公开(公告)日：2020-10-08

申请号：US16907699

申请日：2020-06-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Yu KU ,  Chi-Cheng CHEN ,  Hon-Lin HUANG ,  Wei-Li HUANG ,  Chun-Yi WU ,  Chen-Shien CHEN

IPC: H01L49/02

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The semiconductor device structure also includes an isolation element over the magnetic element. The isolation element partially covers a top surface of the magnetic element. The semiconductor device structure further includes a conductive line over the isolation element. In addition, the semiconductor device structure includes a dielectric layer over the conductive line and the magnetic element.

公开(公告)号：US20200075448A1

公开(公告)日：2020-03-05

申请号：US16432625

申请日：2019-06-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Cheng CHEN ,  Wei-Li HUANG ,  Chun-Yi WU ,  Kuang-Yi WU ,  Hon-Lin HUANG ,  Chih-Hung SU ,  Chin-Yu KU ,  Chen-Shien CHEN

IPC: H01L23/31 ,  H01L21/768 ,  H01L23/532 ,  H01L23/00

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a passivation layer over a semiconductor substrate. The method also includes forming a magnetic element over the passivation layer. The method further includes forming an isolation layer over the magnetic element and the passivation layer. The isolation layer includes a polymer material. In addition, the method includes forming a conductive line over the isolation layer, and the conductive line extends across the magnetic element.

公开(公告)号：US20190371653A1

公开(公告)日：2019-12-05

申请号：US15991523

申请日：2018-05-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ting-Li YANG ,  Wei-Li HUANG ,  Sheng-Pin YANG ,  Chi-Cheng CHEN ,  Hon-Lin HUANG ,  Chin-Yu KU ,  Chen-Shien CHEN

IPC: H01L21/768 ,  H01L23/00 ,  H01L23/04 ,  H01L23/522 ,  H01L49/02

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first conductive line over a substrate. The method includes forming a first protection cap over a first portion of the first conductive line. The first protection cap and the first conductive line are made of different conductive materials. The method includes forming a first photosensitive dielectric layer over the substrate, the first conductive line, and the first protection cap. The method includes forming a first opening in the first photosensitive dielectric layer and over the first protection cap. The method includes forming a conductive via structure and a second conductive line over the first conductive line. The conductive via structure is in the first opening and over the first protection cap, and the second conductive line is over the conductive via structure and the first photosensitive dielectric layer.

公开(公告)号：US20190189577A1

公开(公告)日：2019-06-20

申请号：US16194927

申请日：2018-11-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Hung CHEN ,  Yu-Nu HSU ,  Chun-Chen LIU ,  Heng-Chi HUANG ,  Chien-Chen LI ,  Shih-Yen CHEN ,  Cheng-Nan HSIEH ,  Kuo-Chio LIU ,  Chen-Shien CHEN ,  Chin-Yu KU ,  Te-Hsun PANG ,  Yuan-Feng WU ,  Sen-Chi CHIANG

IPC: H01L23/00 ,  H01L23/498

Abstract: A package structure is provided. The package structure includes a first bump structure formed over a substrate, a solder joint formed over the first bump structure and a second bump structure formed over the solder joint. The first bump structure includes a first pillar layer formed over the substrate and a first barrier layer formed over the first pillar layer. The first barrier layer has a first protruding portion which extends away from a sidewall surface of the first pillar layer, and a distance between the sidewall surface of the first pillar layer and a sidewall surface of the first barrier layer is in a range from about 0.5 μm to about 3 μm. The second bump structure includes a second barrier layer formed over the solder joint and a second pillar layer formed over the second barrier layer, wherein the second barrier layer has a second protruding portion which extends away from a sidewall surface of the second pillar layer.

公开(公告)号：US20200381293A1

公开(公告)日：2020-12-03

申请号：US16994091

申请日：2020-08-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ting-Li YANG ,  Wei-Li HUANG ,  Sheng-Pin YANG ,  Chi-Cheng CHEN ,  Hon-Lin HUANG ,  Chin-Yu KU ,  Chen-Shien CHEN

IPC: H01L21/768 ,  H01L23/00 ,  H01L23/04 ,  H01L23/522 ,  H01L49/02 ,  H01F41/04 ,  H01F17/00 ,  H01L23/532

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first conductive line over a substrate. The semiconductor device structure includes a first protection cap over the first conductive line. The semiconductor device structure includes a first photosensitive dielectric layer over the substrate, the first conductive line, and the first protection cap. The semiconductor device structure includes a conductive via structure passing through the first photosensitive dielectric layer and connected to the first protection cap. The semiconductor device structure includes a second conductive line over the conductive via structure and the first photosensitive dielectric layer. The semiconductor device structure includes a second protection cap over the second conductive line. The semiconductor device structure includes a second photosensitive dielectric layer over the first photosensitive dielectric layer, the second conductive line, and the second protection cap.

公开(公告)号：US20200075708A1

公开(公告)日：2020-03-05

申请号：US16260599

申请日：2019-01-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Cheng CHEN ,  Wei-Li HUANG ,  Chien-Chih KUO ,  Hon-Lin HUANG ,  Chin-Yu KU ,  Chen-Shien CHEN

IPC: H01L49/02 ,  H01L23/00 ,  H01F41/04

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming an adhesive layer over a semiconductor substrate and forming a magnetic element over the adhesive layer. The method also includes forming an isolation element extending across the magnetic element. The isolation element partially covers the top surface of the magnetic element and partially covers sidewall surfaces of the magnetic element. The method further includes partially removing the adhesive layer such that an edge of the adhesive layer is laterally disposed between an edge of the magnetic element and an edge of the isolation element. In addition, the method includes forming a conductive line over the isolation element.

公开(公告)号：US20190355660A1

公开(公告)日：2019-11-21

申请号：US16222107

申请日：2018-12-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hon-Lin HUANG ,  Wei-Li HUANG ,  Chun-Kai TZENG ,  Cheng-Jen LIN ,  Chin-Yu KU

IPC: H01L23/522 ,  H01L23/528

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate, and the substrate includes a first region and a second region. The semiconductor device structure includes a first conductive structure formed over the first region of the substrate and a bottom magnetic layer formed over the second region of the substrate. The semiconductor device structure also includes a second conductive structure formed over the bottom magnetic layer and a first insulating layer formed over a sidewall surface of the first conductive structure. The semiconductor device structure further includes a second insulating layer formed over the first insulating layer, and the second insulating layer has a stair-shaped structure.