公开(公告)号：US20200006465A1

公开(公告)日：2020-01-02

申请号：US16260439

申请日：2019-01-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Yu KU ,  Chi-Cheng CHEN ,  Hon-Lin HUANG ,  Wei-Li HUANG ,  Chun-Yi WU ,  Chen-Shien CHEN

IPC: H01L49/02

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming an etch stop layer over a semiconductor substrate and forming a magnetic element over the etch stop layer. The method also includes forming an isolation element extending across the magnetic element. The isolation element partially covers the top surface of the magnetic element and partially covers sidewall surfaces of the magnetic element. The method further includes forming a conductive line over the isolation element. In addition, the method includes forming a dielectric layer over the conductive line, the isolation element, and the magnetic element.

公开(公告)号：US20200321431A1

公开(公告)日：2020-10-08

申请号：US16907699

申请日：2020-06-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Yu KU ,  Chi-Cheng CHEN ,  Hon-Lin HUANG ,  Wei-Li HUANG ,  Chun-Yi WU ,  Chen-Shien CHEN

IPC: H01L49/02

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The semiconductor device structure also includes an isolation element over the magnetic element. The isolation element partially covers a top surface of the magnetic element. The semiconductor device structure further includes a conductive line over the isolation element. In addition, the semiconductor device structure includes a dielectric layer over the conductive line and the magnetic element.

公开(公告)号：US20200075448A1

公开(公告)日：2020-03-05

申请号：US16432625

申请日：2019-06-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Cheng CHEN ,  Wei-Li HUANG ,  Chun-Yi WU ,  Kuang-Yi WU ,  Hon-Lin HUANG ,  Chih-Hung SU ,  Chin-Yu KU ,  Chen-Shien CHEN

IPC: H01L23/31 ,  H01L21/768 ,  H01L23/532 ,  H01L23/00

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a passivation layer over a semiconductor substrate. The method also includes forming a magnetic element over the passivation layer. The method further includes forming an isolation layer over the magnetic element and the passivation layer. The isolation layer includes a polymer material. In addition, the method includes forming a conductive line over the isolation layer, and the conductive line extends across the magnetic element.