公开(公告)号：US20240339555A1

公开(公告)日：2024-10-10

申请号：US18745245

申请日：2024-06-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yin-Kai Liao ,  Jen-Cheng Liu ,  Kuan-Chieh Huang ,  Chih-Ming Hung ,  Yi-Shin Chu ,  Hsiang-Lin Chen ,  Sin-Yi Jiang

IPC: H01L31/18 ,  H01L27/146 ,  H01L31/0288

CPC classification number: H01L31/1804 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/0288

Abstract: A method and structure providing an optical sensor having an optimized Ge—Si interface includes providing a substrate having a pixel region and a logic region. In some embodiments, the method further includes forming a trench within the pixel region. In various examples, and after forming the trench, the method further includes forming a doped semiconductor layer along sidewalls and along a bottom surface of the trench. In some embodiments, the method further includes forming a germanium layer within the trench and over the doped semiconductor layer. In some examples, and after forming the germanium layer, the method further includes forming an optical sensor within the germanium layer.

公开(公告)号：US12015099B2

公开(公告)日：2024-06-18

申请号：US17337265

申请日：2021-06-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yin-Kai Liao ,  Jen-Cheng Liu ,  Kuan-Chieh Huang ,  Chih-Ming Hung ,  Yi-Shin Chu ,  Hsiang-Lin Chen ,  Sin-Yi Jiang

IPC: H01L31/18 ,  H01L27/146 ,  H01L31/0288

CPC classification number: H01L31/1804 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/0288

Abstract: A method and structure providing an optical sensor having an optimized Ge—Si interface includes providing a substrate having a pixel region and a logic region. In some embodiments, the method further includes forming a trench within the pixel region. In various examples, and after forming the trench, the method further includes forming a doped semiconductor layer along sidewalls and along a bottom surface of the trench. In some embodiments, the method further includes forming a germanium layer within the trench and over the doped semiconductor layer. In some examples, and after forming the germanium layer, the method further includes forming an optical sensor within the germanium layer.