公开(公告)号：US10533252B2

公开(公告)日：2020-01-14

申请号：US15088064

申请日：2016-03-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Chiang Chiu ,  Ding-I Liu ,  Chin-Feng Lin ,  Po-Hsiung Leu

IPC: C23C16/50 ,  C23C16/455 ,  H01J37/32 ,  C23C16/505

Abstract: A showerhead is configured to be mounted inside a processing chamber and provide a processing gas onto a semiconductor wafer inside the processing chamber. The showerhead includes a supply plenum, a faceplate, and an electrode plate assembly. The faceplate is disposed at a side of the supply plenum. The electrode plate assembly is disposed between a gas source and the supply plenum. The electrode plate assembly includes a first plate having a unitary construction and having a plurality of first gas holes, and a second plate having a unitary construction and having a plurality of second gas holes. The second plate is located between the first plate and the supply plenum and separated from the first plate. The plurality of second gas holes are partially overlapped but misaligned with the plurality of first gas holes. A semiconductor apparatus having the same and a semiconductor process are also provided.

公开(公告)号：US20170283948A1

公开(公告)日：2017-10-05

申请号：US15088064

申请日：2016-03-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Chiang Chiu ,  Ding-I Liu ,  Chin-Feng Lin ,  Po-Hsiung Leu

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/505

Abstract: A showerhead is configured to be mounted inside a processing chamber and provide a processing gas onto a semiconductor wafer inside the processing chamber. The showerhead includes a supply plenum, a faceplate, and an electrode plate assembly. The faceplate is disposed at a side of the supply plenum. The electrode plate assembly is disposed between a gas source and the supply plenum. The electrode plate assembly includes a first plate having a unitary construction and having a plurality of first gas holes, and a second plate having a unitary construction and having a plurality of second gas holes. The second plate is located between the first plate and the supply plenum and separated from the first plate. The plurality of second gas holes are partially overlapped but misaligned with the plurality of first gas holes. A semiconductor apparatus having the same and a semiconductor process are also provided.